Datasheet

10/28/10
IRLML6344TRPbF
HEXFET
®
Power MOSFET
PD - 97585
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 10
Application(s)
Micro3
TM
(SOT-23)
IRLML6344TRPbF
D
S
G
3
1
2
Load/ System Switch
Features and Benefits
Benefits
V
DS
30 V
V
GS Max
± 12 V
R
DS(on) max
(@V
GS
= 4.5V)
29
mΩ
R
DS(on) max
(@V
GS
= 2.5V)
37
mΩ
Absolute Maximum Ratings
Symbol Parameter Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JA
Junction-to-Ambient ––– 100
R
θ
JA
Junction-to-Ambient (t<10s)
––– 99
W
°C/W
A
Max.
5.0
4.0
-55 to + 150
± 12
0.01
30
1.3
0.8
25
Low R
DSon
(<29m
Ω
)
Lower Conduction Losses
Industry-standard SOT-23 Package Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen
results in Environmentally friendly
MSL1, Consumer Qualification Increased Reliability

Summary of content (10 pages)