Datasheet

03/09/12
IRLML6346TRPbF
HEXFET
®
Power MOSFET
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through
 are on page 10
Application(s)
Micro3
TM
(SOT-23)
IRLML6346TRPbF
Load/ System Switch
Features and Benefits
Absolute Maximum Ratings
Symbol
Parameter
Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS Gate-to-Source Voltage
V
T
J,
T
STG Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
JA Junction-to-Ambient
––– 100
R
JA
Junction-to-Ambient (t<10s)
––– 99
0.8
17
W
°C/W
A
Max.
3.4
2.7
-55 to + 150
± 12
0.01
30
1.3
V
DS
30 V
V
GS Max
± 12 V
R
DS(on) max
(@V
GS
= 4.5V)
63
m

R
DS(on) max
(@V
GS
= 2.5V)
80
m

Features
Benefits
Industry-standard SOT-23 Package results in Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen
Environmentally friendly
MSL1, Consumer Qualification
Increased Reliability
PD - 97584A