Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLML6402TRPBF, MOSFET P channel -3.7A -20V

Parameter Typ. Max. Units

θJA

Maximum Junction-to-Ambient 75 100 °C/W

IRLML6402

HEXFET

Power MOSFET

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET



power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

A thermally enhanced large pad leadframe has been incorporated

into the standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This package,

dubbed the Micro3, is ideal for applications where printed

circuit board space is at a premium. The low profile (<1.1mm)

of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

The thermal resistance and power dissipation are the best

available.

Thermal Resistance

DSS

= -20V

DS(on)

= 0.065Ω

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

Description

04/29/03

www.irf.com 1

PD - 93755B

Parameter Max. Units

Drain- Source Voltage -20 V

@ T

= 25°C Continuous Drain Current, V

@ -4.5V -3.7

@ T

= 70°C Continuous Drain Current, V

@ -4.5V -2.2 A

Pulsed Drain Current  -22

= 25°C Power Dissipation 1.3

= 70°C Power Dissipation 0.8

Linear Derating Factor 0.01 W/°C

Single Pulse Avalanche Energy 11 mJ

Gate-to-Source Voltage ± 12 V

STG

Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

Micro3

Summary of content (9 pages)

PAGE 1
PD - 93755B IRLML6402 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
PAGE 2
IRLML6402 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRLML6402 100 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 -2.25V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 10 -2.25V 100 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C V DS = -15V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2.
PAGE 4
IRLML6402 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 800 Coss = Cds + Cgd Ciss 600 400 Coss 200 Crss 10 -VGS , Gate-to-Source Voltage (V) 1000 ID = -3.7A VDS =-10V 8 6 4 2 0 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 0 100 3 VDS, Drain-to-Source Voltage (V) 12 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 9 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5.
PAGE 5
IRLML6402 25 EAS , Single Pulse Avalanche Energy (mJ) -ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 150 ID -1.7A -3.0A BOTTOM -3.7A TOP 20 15 10 5 0 25 TC , Case Temperature ( °C) 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.
PAGE 6
RDS ( on ) , Drain-to-Source On Resistance ( Ω ) IRLML6402 RDS(on) , Drain-to -Source Voltage ( Ω ) 0.14 0.12 0.10 0.08 Id = -3.7A 0.06 0.04 0.02 2.0 3.0 4.0 5.0 6.0 -VGS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 7.0 0.20 VGS = -2.5V 0.16 0.12 0.08 VGS = -4.5V 0.04 0.00 0 5 10 15 20 25 30 -I D , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current www.irf.
PAGE 7
IRLML6402 Package Outline Micro3ä Dimensions are shown in millimeters (inches) D -B- 3 E -A- LEAD ASSIGNMENTS 1 - GATE 2 - SOURCE 3 - DRAIN 3 3 DIM H 1 0.20 ( .008 ) 2 M A M e e1 θ A INCHES MILLIMETERS A MIN .032 MAX .044 MIN 0.82 MAX 1.11 A1 .001 .004 0.02 0.10 B .015 .021 0.38 0.54 C .004 .006 0.10 0.15 D .105 .120 2.67 3.05 e .0750 BASIC 1.90 BASIC e1 .0375 BASIC 0.95 BASIC E .047 .055 1.20 1.40 H .083 .098 2.10 2.50 L .005 .010 0.13 0.
PAGE 8
IRLML6402 Part Marking Information Micro3ä Notes : T his part marking information applies to devices produced before 02/26/2001 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR EXAMPLE: T HIS IS AN IRLML6302 PART NUMBER DATE CODE PART NUMBER CODE REFERENCE: 1A = 1B = 1C = 1D = 1E = 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24
PAGE 9
IRLML6402 Tape & Reel Information Micro3ä Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2.