Datasheet
02/09/12
IRLML9301TRPbF
HEXFET
®
Power MOSFET
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 10
Micro3
TM
(SOT-23)
IRLML9301TRPbF
Features and Benefits
Features
Benefits
S
G
1
2
D3
Application(s)
• System/Load Switch
V
DS
-30 V
V
GS Max
± 20 V
R
DS(on) max
(@V
GS
= -10V)
64
m
Ω
R
DS(on) max
(@V
GS
= -4.5V)
103
m
Ω
Symbol
Parameter
Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJA
Junction-to-Ambient
––– 100
R
θJA
Junction-to-Ambient (t<10s)
––– 99
°C/W
A
Max.
-3.6
-2.9
-55 to + 150
± 20
0.01
-30
1.3
0.8
-15
W
Low R
DS(on)
(
≤
64m
Ω
)
Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen
⇒
Environmentally friendly
MSL1, Consumer qualification Increased reliability
PD - 96310C