Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLMS1902TRPBF, MOSFET N channel 3.2A 20V

IRLMS1902

DSS

= 20V

DS(on)

= 0.10Ω

HEXFET

Power MOSFET

PD - 9.1540B

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The Micro6 package with its customized leadframe

produces a HEXFET power MOSFET with Rds(on)

60% less than a similar size SOT-23. This package is

ideal for applications where printed circuit board space

is at a premium. It's unique thermal design and R

DS(on)

reduction enables a current-handling increase of nearly

300% compared to the SOT-23.

Description

1/12/98

Micro6

l Generation V Technology

l Micro6 Package Style

l Ultra Low Rds(on)

l N-Channel MOSFET

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 4.5V 3.2

@ T

= 70°C Continuous Drain Current, V

@ 4.5V 2.6 A

Pulsed Drain Current  18

= 25°C Power Dissipation 1.7 W

Linear Derating Factor 13 mW/°C

Gate-to-Source Voltage ± 12 V

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

STG

Junction and Storage Temperature Range -55 to + 150 °C

Parameter Min. Typ. Max Units

θJA

Maximum Junction-to-Ambient  –––

–––

75 °C/W

Thermal Resistance Ratings

Top View

Summary of content (8 pages)

PAGE 1
PD - 9.1540B IRLMS1902 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) N-Channel MOSFET Description D D 1 6 D 2 5 D G 3 4 S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRLMS1902 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRLMS1902 100 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.75V 10 1 20µs PULSE WIDTH TJ = 25 °C 1.75V 0.1 0.1 1 10 1 1.75V R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C 1 V DS = 10V 20µs PULSE WIDTH 2.5 3.0 3.5 4.0 4.5 10 Fig 2. Typical Output Characteristics 100 2.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20µs PULSE WIDTH TJ = 150 °C 0.1 0.
PAGE 4
IRLMS1902 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 500 400 Ciss 300 200 Coss 100 Crss 10 8 6 4 2 0 1 10 ID = 2.2A VDS = 16V VGS, Gate-to-Source Voltage (V) 600 FOR TEST CIRCUIT SEE FIGURE 9 0 100 0 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 6 8 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRLMS1902 4.5V RD VDS QG VGS QGS QGD D.U.T. RG + - VDD VG 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 90% 50KΩ .2µF 12V .3µF D.U.T. + V - DS 10% VGS VGS td(on) 3mA IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 P DM 0.
PAGE 6
IRLMS1902 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 7
IRLMS1902 Package Outline Micro6 Outline 3 .0 0 (.1 1 8 ) 2 .8 0 (.1 1 1 ) 1 .7 5 (.0 6 8 ) 1 .5 0 (.0 6 0 ) 6 -A - 1 LE AD A SS IG N MEN T S R EC O MME N D E D FO O T PR IN T -B - 5 4 2 3 6X 2X 0 .1 5 D 6 5 4 1 2 3 D D G 2 X 0. 9 5 (.0 3 7 5 ) S 6 X (1 .06 (.0 4 2 ) 3 .00 (.1 1 8 ) 2 .60 (.1 0 3 ) 0.9 5 ( .0 3 7 5 ) D 2 .20 (.0 8 7 ) 0 .5 0 (.0 19 ) 0 .3 5 (.0 14 ) 6 X 0 .6 5 (. 02 5 ) (.0 06 ) M C A S B S O O 0 -1 0 1 .30 (.0 5 1 ) 0 .90 (.0 3 6 ) 6X 1 .45 (.
PAGE 8
IRLMS1902 Tape & Reel Information Micro6 8m m 4mm F E E D D IR E C T IO N N OTE S : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 1 7 8.0 0 ( 7 .0 08 ) M AX . 9 .9 0 ( .3 90 ) 8 .4 0 ( .3 31 ) NO T E S : 1. C O N T R O L L IN G D IM E NS IO N : M IL L IM E T E R. 2. O U T L IN E CO NF O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St.