Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLMS2002TRPBF, MOSFET N channel 6.5A 20V

Parameter Max. Units

Drain- Source Voltage 20 V

@ T

= 25°C Continuous Drain Current, V

@ 4.5V 6.5

@ T

= 70°C Continuous Drain Current, V

@ 4.5V 5.2 A

Pulsed Drain Current  20

= 25°C Power Dissipation 2.0

= 70°C Power Dissipation 1.3

Linear Derating Factor 0.016 W/°C

Gate-to-Source Voltage ± 12 V

STG

Junction and Storage Temperature Range -55 to + 150 °C

01/13/03

Parameter Max. Units

θJA

Maximum Junction-to-Ambient 62.5 °C/W

Thermal Resistance

Absolute Maximum Ratings

www.irf.com 1

IRLMS2002

HEXFET

Power MOSFET

These N-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The Micro6 package with its customized leadframe

produces a HEXFET



power MOSFET with R

DS(on)

60%

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium. It's unique thermal design and R

DS(on)

reduction

enables a current-handling increase of nearly 300%

compared to the SOT-23.

DSS

= 20V

DS(on)

= 0.030Ω

Description

l Ultra Low On-Resistance

l N-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l 2.5V Rated

Top View

Micro6

PD- 93758D

Summary of content (8 pages)

PAGE 1
PD- 93758D IRLMS2002 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated A D D 1 6 D 2 5 D G 3 4 S VDSS = 20V RDS(on) = 0.030Ω Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
PAGE 2
IRLMS2002 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRLMS2002 100 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V 10 1.50V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 10 1.50V RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C 10 V DS = 15V 20µs PULSE WIDTH 2.5 3.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 2.0 1 VDS , Drain-to-Source Voltage (V) Fig 1.
PAGE 4
IRLMS2002 2000 VGS , Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) 10 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 1200 800 400 Coss Crss 0 1 ID = 6.5A 5.3A VDS = 10V 8 6 4 2 0 10 0 100 4 8 12 16 20 24 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
6.0 0.20 5.0 0.10 VGS(th) , Variace ( V ) ID , Drain Current (A) IRLMS2002 4.0 3.0 2.0 0.00 Id = 250µA -0.10 -0.20 -0.30 1.0 -0.40 0.0 25 50 75 100 125 150 -50 -25 0 TC , Case Temperature ( ° C) 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2.
PAGE 6
RDS ( on) , Drain-to-Source On Resistance ( Ω ) IRLMS2002 RDS(on) , Drain-to -Source Voltage ( Ω ) 0.040 0.035 0.030 0.025 Id = 5.3A 0.020 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 8.0 0.10 0.08 0.06 0.04 VGS= 2.5V VGS = 4.5V 0.02 0 10 20 30 40 ID, - Drain Current (A ) Fig 13. Typical On-Resistance Vs. Drain Current www.irf.
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IRLMS2002 Micro6 Package Outline 3.00 (.118 ) 2.80 (.111 ) 1.75 (.068 ) 1.50 (.060 ) -A- 6 5 LEAD ASSIGNMENTS 2 0.95 ( .0375 ) D D 6 5 4 1 2 3 D D G 2X 0.95 (.0375 ) S 4 6X (1.06 (.042 ) 3.00 (.118 ) 2.60 (.103 ) 1 RECOMMENDED FOOTPRINT -B- 3 2.20 (.087 ) 0.50 (.019 ) 6X 0.35 (.014 ) 2X 6X 0.65 (.025 ) 0.15 (.006 ) M C A S B S O O 0 -10 1.30 (.051 ) 0.90 (.036 ) 6X 1.45 (.057 ) 0.90 (.036 ) -C- 0.10 (.004 ) 6 SURFACES 0.15 (.006 ) MAX. 0.20 (.007 ) 0.09 (.004 ) 0.
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IRLMS2002 Micro6 Part Marking Information Notes: This part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRLMS6702 WW = (1-26) IF PRECEDED BY L AST DIGIT OF CALENDAR YEAR PART NUMBER DATE CODE TOP WAFER LOT NUMBER CODE YEAR Y 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z BOT TOM WW = (27-52) IF PRECEDED BY A LETT ER PART NUMBER CODE REFERENCE: 2A = 2B = 2C = 2D = 2E = 2F = 2G = 2H =