Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLMS6702TRPBF, MOSFET P channel -2.3A -20V

IRLMS6702

DSS

= -20V

DS(on)

= 0.20Ω

HEXFET

Power MOSFET

PD - 9.1414B

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The Micro6 package with its customized leadframe

produces a HEXFET power MOSFET with Rds(on)

60% less than a similar size SOT-23. This package

is ideal for applications where printed circuit board

space is at a premium. It's unique thermal design and

DS(on)

reduction enables a current-handling increase

of nearly 300% compared to the SOT-23.

Description

8/25/97

Micro6

l Generation V Technology

l Micro6 Package Style

l Ultra Low Rds(on)

l P-Channel MOSFET

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ -4.5V -2.3

@ T

= 70°C Continuous Drain Current, V

@ -4.5V -1.9 A

Pulsed Drain Current  -13

= 25°C Power Dissipation 1.7 W

Linear Derating Factor 13 mW/°C

Gate-to-Source Voltage ± 12 V

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

STG

Junction and Storage Temperature Range -55 to + 150 °C

Top View

Parameter Min. Typ. Max Units

θJA

Maximum Junction-to-Ambient  –––

–––

75 °C/W

Thermal Resistance Ratings

Summary of content (8 pages)

PAGE 1
PD - 9.1414B IRLMS6702 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRLMS6702 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
PAGE 3
IRLMS6702 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTT OM -1. 75V 10 1 -1.7 5V 20 µs P U LSE W IDTH TJ = 25 °C A 0.1 0.1 1 10 1 -1 .75 V 20 µs P UL SE W IDTH TJ = 150 °C 0.1 10 0.1 1 10 -VD S , D rain-to-S ource V oltage (V ) -VD S , Drain-to-Source V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.
PAGE 4
IRLMS6702 10 V GS C is s C rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd -V G S , G a te -to -S o u rce V o lta g e (V ) C , C a p a c ita n c e (p F ) 400 300 C i ss C os s 200 C rs s 100 0 10 8 6 4 2 FOR TE ST C IR C U IT SE E FIG U R E 9 0 A 1 I D = -1 .6A VD S = -1 6V 0 100 4 6 8 A 10 Q G , Total G ate C harge (nC) -VD S , Drain-to-Source V oltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRLMS6702 RD VDS QG VGS -4.5V QGS D.U.T. RG QGD + VG VDD -4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. td(on) t d(off) tf VGS 50KΩ .2µF 12V tr 10% .3µF D.U.T. +VDS VGS 90% -3mA IG VDS ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.
PAGE 6
IRLMS6702 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + ** • dv/dt controlled by RG • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS* * + - * VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 7
IRLMS6702 Package Outline Micro6 Outline 3. 00 (. 11 8 ) 2. 80 (. 11 1 ) 1 .7 5 (. 06 8 ) 1 .5 0 (. 06 0 ) 6 -A - 1 LEA D ASS IG N MEN TS RE CO MMEN DE D FO O T PRIN T -B - 5 4 2 3 6X 2X 0. 15 D 6 5 4 1 2 3 D D 2X 0 . 95 (.0 37 5 ) S 6X (1. 0 6 (.0 4 2 ) 3 .0 0 (.1 1 8 ) 2 .6 0 (.1 0 3 ) 0 .9 5 ( .0 3 75 ) D 2 .2 0 (.0 8 7 ) G 0 .5 0 (. 01 9 ) 0 .3 5 (. 01 4 ) 6 X 0 . 6 5 (. 0 2 5 ) (. 00 6 ) M C A S B S O O 0 -1 0 1 .3 0 (. 05 1 ) 0 .9 0 (. 03 6 ) 6X 1. 4 5 (.
PAGE 8
IRLMS6702 Tape & Reel Information Micro6 8mm 4m m F E E D D IR E C T IO N NO TE S : 1. O UTLINE CO NFO RM S TO EIA-481 & E IA- 541. 17 8.0 0 ( 7.0 08 ) M A X. 9 .90 ( .3 90 ) 8 .40 ( .3 31 ) N O T E S: 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM ET E R . 2 . O U T LIN E C O N F O R M S T O EIA -48 1 & E IA-5 41 . WORLD HEADQUARTERS: 233 Kansas St.