Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLR120NPBF, MOSFET

HEXFET

Power MOSFET

DSS

= 100V

DS(on)

= 0.185Ω

= 10A

Description

l Surface Mount (IRLR120N)

l Straight Lead (IRLU120N)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve the lowest possible

on-resistance per silicon area. This benefit, combined with the

fast switching speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer with

an extremely efficient device for use in a wide variety of

applications.

The D-PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight lead

version (IRFU series) is for through-hole mounting applications.

Power dissipation levels up to 1.5 watts are possible in typical

surface mount applications.

IRLR120NPbF

IRLU120NPbF

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 10

@ T

= 100°C Continuous Drain Current, V

@ 10V 7.0 A

Pulsed Drain Current  35

= 25°C Power Dissipation 48 W

Linear Derating Factor 0.32 W/°C

Gate-to-Source Voltage ± 16 V

Single Pulse Avalanche Energy 85 mJ

Avalanche Current 6.0 A

Repetitive Avalanche Energy 4.8 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 3.1

θJA

Junction-to-Ambient (PCB mount) ** ––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

Thermal Resistance

D-Pak

IRLR120NPbF

I-Pak

IRLU120NPbF

Form

Quantity

Tube 75 IRLR120NPbF

Tape and Reel 2000 IRLR120NTRPbF

Tape and Reel Left 3000 IRLR120NTRLPbF

Tape and Reel Right

3000 IRLR120NTRRPbF EOL notice # 289

IRLU120NPbF IPak Tube 75 IRLU120NPbF

NotePackage Type

Standard Pack

Orderable Part NumberBase Part Number

IRLR120NPbF D-Pak

Summary of content (11 pages)

PAGE 1
IRLR120NPbF IRLU120NPbF l l l Surface Mount (IRLR120N) Straight Lead (IRLU120N) Advanced Process Technology l l Fast Switching l HEXFET® Power MOSFET D Fully Avalanche Rated Lead-Free VDSS = 100V RDS(on) = 0.185Ω G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
PAGE 2
IRLR/U120NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRLR/U120NPbF 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 10 1 2.5V 20μs PULSE WIDTH T J = 25°C 0.1 0.1 1 10 A 10 2.5V 1 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25°C TJ = 175°C 1 VDS = 50V 20μs PULSE WIDTH 4 6 8 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 www.irf.com © 2014 International Rectifier 10 A 100 Fig 2. Typical Output Characteristics 100 0.
PAGE 4
IRLR/U120NPbF Ciss C, Capacitance (pF) 600 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) 800 Coss Crss 0 1 10 V DS = 80V V DS = 50V V DS = 20V 12 400 200 I D = 6.0A 100 A 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 0 VDS , Drain-to-Source Voltage (V) 15 20 A 25 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRLR/U120NPbF 10 V DS VGS ID, Drain Current (Amps) 8 D.U.T. RG 6 RD + -VDD 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% A 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1.
PAGE 6
15V L VDS D.U.T RG IAS 10V tp DRIVER + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) IRLR/U120NPbF 200 TOP BOTTOM 160 ID 2.4A 4.2A 6.0A 120 80 40 0 25 V(BR)DSS 50 75 100 125 150 Starting TJ , Junction Temperature (°C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2μF .3μF 5.0 V QGS + V - DS D.U.T.
PAGE 7
IRLR/U120NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive Period P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRLR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN T HE AS SEMBLY LINE "A" PART NUMBER INTERNAT IONAL RECT IF IER LOGO Note: "P" in ass embly line pos ition indicates "Lead-F ree" IRFR120 12 116A 34 ASS EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in as sembly line pos ition indicates "Lead-F ree" qualification to the
PAGE 9
IRLR/U120NPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information E XAMP L E : T H IS IS AN IR F U 120 WIT H AS S E MB L Y L OT CODE 5678 AS S E MB L E D ON WW 19, 2001 IN T H E AS S E MB LY L INE "A" IN T E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R IR F U 120 119A 56 78 AS S E MB LY L OT CODE Note: "P " in as s embly line pos ition indicates L ead-F ree" DAT E CODE YE AR 1 = 2001 WE E K 19 LINE A OR INT E R NAT IONAL R E CT
PAGE 10
IRLR/U120NPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
PAGE 11
IRLR/U120NPbF † Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level guidelines) MS L1 D-Pak I-Pak RoHS compliant †† Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Revision History Date 7/9/2014 Comment • Updated Electrical parameter table typo on Rdson units from "W" to "Ω" on page2.