Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLR2905PBF, MOSFET N channel 42A 55V

IRLR/U2905

HEXFET

Power MOSFET

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.4

θJA

Case-to-Ambient (PCB mount)** ––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

Thermal Resistance

DSS

= 55V

DS(on)

= 0.027Ω

= 42A

Description

12/8/00

www.irf.com 1

D-Pak

TO-252AA

I-Pak

TO-251AA

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR2905)

l Straight Lead (IRLU2905)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 42 

@ T

= 100°C Continuous Drain Current, V

@ 10V 30 A

Pulsed Drain Current  160

= 25°C Power Dissipation 110 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 16 V

Single Pulse Avalanche Energy 210 mJ

Avalanche Current 25 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD- 91334E

Summary of content (10 pages)

PAGE 1
PD- 91334E IRLR/U2905 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
PAGE 2
IRLR/U2905 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRLR/U2905 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A ) ID , Drain-to-Source Current (A ) TOP 100 10 2.5V 2 0µ s P U LS E W ID TH T J = 2 5°C 1 0.1 1 10 100 10 2.5 V 2 0µ s P U LS E W ID TH T J = 1 75 °C 1 A 100 0.1 1 V D S , D rain-to-S ource V oltage (V ) Fig 2. Typical Output Characteristics 3.
PAGE 4
IRLR/U2905 2400 C , Capacitance (pF) C iss V GS C is s C rs s C oss = = = = 15 0V, f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C gd V G S , G a te-to-S ou rc e V o ltag e (V ) 2800 1600 C oss 800 C rss 400 0 10 9 6 3 FO R TE S T CIR C U IT S E E FIG U R E 1 3 0 A 1 V DS = 44V V DS = 28V 12 2000 1200 I D = 2 5A 100 0 V D S , D rain-to-S ourc e V oltage (V ) 20 30 40 50 60 A 70 Q G , T otal G ate C harge (nC ) Fig 6. Typical Gate Charge Vs.
PAGE 5
IRLR/U2905 50 RD VDS LIMITED BY PACKAGE VGS I D , Drain Current (A) 40 D.U.T. RG + -VDD 30 5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1.
PAGE 6
IRLR/U2905 1 5V L VDS D .U .T RG IA S 20V D R IV E R + V - DD 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A E A S , S ingle Pulse Avalanc he E nergy (m J) 500 TO P B OTTOM 400 ID 1 0A 17 A 25A 300 200 100 0 V D D = 25 V 25 50 A 75 100 125 150 175 S tarting T J , J unc tion T em perature (°C ) V (B R )D SS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .
PAGE 7
IRLR/U2905 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRLR/U2905 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 2 1 - GATE 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 1 .1 4 (.
PAGE 9
IRLR/U2905 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A - 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) L E A D A S S IG N M E N T S 4 1 - GATE 2 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 2 3 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 3X 3 - SOURCE 4 - D R A IN 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 .
PAGE 10
IRLR/U2905 Tape & Reel Information TO-252AA Dimensions are shown in millimeters (inches) TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TRL 16 .3 ( .641 ) 15 .7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.