Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLR2908PBF, MOSFET

10/01/10

www.irf.com 1

IRLR2908PbF

IRLU2908PbF

HEXFET

Power MOSFET

Description

This HEXFET ® Power MOSFET utilizes the latest processing techniques

to achieve extremely low on-resistance per silicon area. Additional features

of this HEXFET power MOSFET are a 175°C junction operating temperature,

low RθJC, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared,

or wave soldering techniques. The straight lead version (IRFU series) is

for through-hole mounting applications. Power dissipation levels up to 1.5

watts are possible in typical surface mount applications.

DSS

= 80V

DS(on)

= 28mΩ

= 30A

D-Pak

IRLR2908PbF

Features

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

I-Pak

IRLU2908PbF

Absolute Maximum Ratings

Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 100°C

Continuous Drain Current, V

@ 10V (See Fig. 9)

@ T

= 25°C

Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

= 25°C

Maximum Power Dissipation W

Linear Derating Factor W/°C

Gate-to-Source Voltage V

Single Pulse Avalanche Energy (Thermally Limited)

(tested)

Sin

le Pulse Avalanche Ener

Tested Value

Avalanche Current

Repetitive Avalanche Ener

dv/dt

Peak Diode Recovery dv/dt

V/ns

Operating Junction and °C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.3 °C/W

θJA

Junction-to-Ambient (PCB Mount)

––– 40

θJA

Junction-to-Ambient ––– 110

120

0.77

± 16

180

250

See Fig.12a,12b,15,16

Max.

150

300 (1.6mm from case )

-55 to + 175

2.3

PD - 95552B

Summary of content (11 pages)

PAGE 1
PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V RDS(on) = 28mΩ G ID = 30A S Description This HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRLR/U2908PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 22.5 28 mΩ ––– 25 30 V VGS = 0V, ID = 250µA VGS = 10V, ID = 23A VGS = 4.5V, ID = 20A f f VGS(th) Gate Threshold Voltage 1.0 ––– 2.
PAGE 3
IRLR/U2908PbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 4.5V 4.0V 3.5V 3.0V 2.7V 2.5V 2.5V 1 0.1 100 BOTTOM VGS 15V 10V 4.5V 4.0V 3.5V 3.0V 2.7V 2.5V 2.5V 10 1 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.01 0.01 0.1 1 10 0.01 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2.
PAGE 4
IRLR/U2908PbF 100000 VGS , Gate-to-Source Voltage (V) ID= 23A Coss = Cds + Cgd 10000 C, Capacitance(pF) 5.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Ciss 1000 Coss 100 Crss 4.0 VDS= 16V 3.0 2.0 1.0 0.0 10 1 10 0 100 10 15 20 25 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 100.00 ID, Drain-to-Source Current (A) 1000.
PAGE 5
IRLR/U2908PbF 40 35 ID, Drain Current (A) 30 25 20 15 10 5 ID = 38A 2.5 VGS = 4.5V 2.0 (Normalized) RDS(on) , Drain-to-Source On Resistance 3.0 0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 175 -60 -40 -20 0 T C , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 P DM t1 0.
PAGE 6
IRLR/U2908PbF DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 400 15V ID 9.3A 16A BOTTOM 23A TOP 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 2.5 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T.
PAGE 7
IRLR/U2908PbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 23A 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16.
PAGE 8
IRLR/U2908PbF D.U.T Driver Gate Drive + - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T.
PAGE 9
IRLR/U2908PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 2001 IN T HE AS SEMB LY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFR120 116A 12 34 AS SEMB LY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in assembly line position indicates "Lead-Free" qualification to the co
PAGE 10
IRLR/U2908PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information E XAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 IN T HE AS SEMBLY LINE "A" INT ERNAT IONAL RE CT IF IER LOGO PART NUMBER IRF U120 119A 56 78 ASSE MBLY LOT CODE Note: "P" in as s embly line pos ition indicates Lead-Free" DAT E CODE YE AR 1 = 2001 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 56 ASS EMBLY
PAGE 11
IRLR/U2908PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.