Datasheet

10/01/10
www.irf.com 1
HEXFET
®
is a registered trademark of International Rectifier.
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Logic Level
IRLR3114ZPbF
IRLU3114ZPbF
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 4.9mΩ
S
D
G
D-Pak
IRLR3114ZPbF
I-Pak
IRLU3114ZPbF
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter T
y
p. Max. Units
R
θJC
Junction-to-Case
––– 1.05
R
θJA
Junction-to-Ambient (PCB mount)
––– 40 °C/W
R
θJA
Junction-to-Ambient
––– 110
260
130
See Fig.12a, 12b, 15, 16
140
0.95
±16
Max.
130
89
500
42
-55 to + 175
300
10 lbf
in (1.1N m)
PD - 97284A