Datasheet

02/06/09
www.irf.com 1
HEXFET
®
Power MOSFET
IRLR3636PbF
IRLU3636PbF
GDS
Gate Drain Source
S
D
G
D-Pak
IRLR3636PbF
I-Pak
IRLU3636PbF
G
S
D
G
D
S
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low R
DS(ON)
at 4.5V V
GS
l Superior R*Q at 4.5V V
GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
V
DSS
60V
R
DS
(
on
)
typ.
5.4m
max.
6.8m
I
D
(
Silicon Limited
)
99A
I
D (Package Limited)
50A
PD - 96224
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Ener
g
y
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case
–––
1.05
R
θJA
Junction-to-Ambient (PCB Mount)
––– 50
°C/W
R
θJA
Junction-to-Ambient
––– 110
See Fig.14, 15, 22a, 22b
°C
170
143
22
±16
0.95
-55 to + 175
300 (1.6mm from case)
Max.
99
70
396
50