Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLR3705ZPBF, MOSFET

10/01/10

www.irf.com 1

HEXFET

is a registered trademark of International Rectifier.

HEXFET

Power MOSFET

DSS

= 55V

DS(on)

= 8.0mΩ

= 42A

This HEXFET

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features combine

to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

Description

Logic Level

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Features

D-Pak

IRLR3705ZPbF

I-Pak

IRLU3705ZPbF

IRLR3705ZPbF

IRLU3705ZPbF

Absolute Maximum Ratin

Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

(Silicon Limited)

@ T

= 100°C

Continuous Drain Current, V

@ 10V

@ T

= 25°C

Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

= 25°C

Power Dissipation W

Linear Derating Factor W/°C

Gate-to-Source Voltage V

AS (Thermally limited)

Single Pulse Avalanche Energy

(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

STG

Storage Temperature Range °C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case

––– 1.14

Junction-to-Ambient (PCB mount)

––– 40 °C/W

θJA

Junction-to-Ambient

––– 110

190

110

See Fig.12a, 12b, 15, 16

130

0.88

± 16

Max.

360

-55 to + 175

300 (1.6mm from case )

10 lbf

in (1.1N m)

PD - 95956A

Summary of content (11 pages)

PAGE 1
PD - 95956A IRLR3705ZPbF IRLU3705ZPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRLR/U3705ZPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ RDS(on) Min. Typ. Max. Units V Conditions 55 ––– ––– VGS = 0V, ID = 250µA Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA Static Drain-to-Source On-Resistance ––– 6.5 8.0 mΩ VGS = 10V, ID = 42A ––– ––– 11 VGS = 5.0V, ID ––– ––– 12 VGS = 4.5V, ID e = 34A e = 21A e VGS(th) Gate Threshold Voltage 1.
PAGE 3
IRLR/U3705ZPbF 1000 100 BOTTOM TOP 10 2.8V ≤ 60µs PULSE WIDTH Tj = 25°C ID, Drain-to-Source Current (A) TOP ID, Drain-to-Source Current (A) 1000 VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V BOTTOM 2.8V 10 ≤ 60µs PULSE WIDTH Tj = 175°C 1 1 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 100 TJ = 25°C TJ = 175°C 100.0 10.
PAGE 4
IRLR/U3705ZPbF 5000 VGS, Gate-to-Source Voltage (V) 4000 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 3000 2000 1000 Coss VDS = 44V VDS= 28V VDS= 11V 10 8 6 4 2 Crss 0 0 1 ID= 42A 10 0 100 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 TJ = 175°C 10.0 TJ = 25°C 1.0 VGS = 0V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) Fig 7.
PAGE 5
IRLR/U3705ZPbF 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 20 0 25 50 75 100 125 150 ID = 42A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 0 TC , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 τJ 0.05 0.02 0.
PAGE 6
15V DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) IRLR/U3705ZPbF 500 I D 5.3A 7.0A BOTTOM 42A TOP 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 2.5 VG Charge Fig 13a.
PAGE 7
IRLR/U3705ZPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 0.10 10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.
PAGE 8
IRLR/U3705ZPbF D.U.T Driver Gate Drive + • • • • D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T.
PAGE 9
IRLR/U3705ZPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN T HE ASS EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRF R120 116A 12 34 ASS EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in assembly line position indicates "Lead-Free" qualification to the co
PAGE 10
IRLR/U3705ZPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 IN T HE AS SEMBLY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 119A 56 78 ASS EMBLY LOT CODE Note: "P" in as s embly line pos ition indicates Lead-Free" DAT E CODE YEAR 1 = 2001 WEE K 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBE R IRFU120 56 ASS EMBLY L
PAGE 11
IRLR/U3705ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.