Datasheet

www.irf.com 1
12/08/04
IRLR3717PbF
IRLU3717PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 11
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 1.69 °C/W
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 50
R
θ
JA
Junction-to-Ambient ––– 110
300 (1.6mm from case)
-55 to + 175
89
0.59
44
Max.
120
81
460
± 20
20
D-Pak
IRLR3717
I-Pak
IRLU3717
V
DSS
R
DS(on)
max
Qg
20V
4.0m
21nC
PD - 95776A