Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLR7843, MOSFET HEXFET Power MOSFET

www.irf.com 1

12/30/03

IRLR7843

IRLU7843

HEXFET

Power MOSFET

Notes  through  are on page 11

Applications

Benefits

l Very Low RDS(on) at 4.5V V

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

D-Pak

IRLR7843

I-Pak

IRLU7843

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage V

Gate-to-Source Voltage

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

= 100°C

Maximum Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.05

θJA

Junction-to-Ambient (PCB Mount)

––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

140

Max.

161

113

620

± 20

0.95

300 (1.6mm from case)

-55 to + 175

DSS

DS(on)

max

30V

3.3m

34nC

PD - 94638A

Summary of content (11 pages)

PAGE 1
PD - 94638A IRLR7843 IRLU7843 ® HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use VDSS 30V Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current RDS(on) max 3.3m: D-Pak IRLR7843 Qg 34nC I-Pak IRLU7843 Absolute Maximum Ratings Parameter Max.
PAGE 2
IRLR/U7843 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 19 2.6 ––– 3.3 VGS(th) ∆VGS(th)/∆TJ IDSS Gate Threshold Voltage ––– 1.5 3.2 ––– 4.0 2.3 Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -5.4 ––– ––– 1.
PAGE 3
IRLR/U7843 1000 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 100 10 2.5V 1 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1 0.1 1 10 2.5V 10 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 100 0.1 100 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.
PAGE 4
IRLR/U7843 12 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds Crss = C gd ID= 12A SHORTED VGS, Gate-to-Source Voltage (V) 100000 C, Capacitance (pF) Coss = Cds + Cgd 10000 Ciss Coss 1000 Crss VDS= 24V VDS= 15V 10 8 6 4 2 0 100 1 10 0 100 20 80 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000.
PAGE 5
IRLR/U7843 160 2.5 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) LIMITED BY PACKAGE 120 80 40 2.0 ID = 250µA 1.5 1.0 0.5 0 25 50 75 100 125 150 0.0 175 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 τJ 0.05 0.02 0.01 0.
PAGE 6
IRLR/U7843 15V D.U.T RG + V - DD IAS 20V VGS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) DRIVER L VDS 6000 ID 8.6A 9.6A BOTTOM 12A TOP 5000 4000 3000 2000 1000 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS LD VDS Fig 12b. Unclamped Inductive Waveforms + VDD D.U.T Current Regulator Same Type as D.U.T. VGS Pulse Width < 1µs Duty Factor < 0.
PAGE 7
IRLR/U7843 D.U.T Driver Gate Drive + + P.W. - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period V DD + - Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRLR/U7843 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses.
PAGE 9
IRLR/U7843 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 3 0.51 (.020) MIN. -B1.52 (.060) 1.15 (.045) 2X 2 - DRAIN 3 - SOURCE 4 - DRAIN 0.89 (.035) 3X 0.64 (.025) 1.14 (.045) 0.76 (.
PAGE 10
IRLR/U7843 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A- 0.58 (.023) 0.46 (.018) 1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) LEAD ASSIGNMENTS 4 1 - GATE 2 - DRAIN 6.45 (.245) 5.68 (.224) 1 2 3 -B2.28 (.090) 1.91 (.075) 3X 3 - SOURCE 4 - DRAIN 6.22 (.245) 5.97 (.235) 1.52 (.060) 1.15 (.045) 1.14 (.045) 0.76 (.030) 2.28 (.090) 3X 9.65 (.380) 8.89 (.350) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.
PAGE 11
IRLR/U7843 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.