Datasheet
www.irf.com 1
08/02/11
IRLR8256PbF
IRLU8256PbF
HEXFET
®
Power MOSFET
Notes through are on page 11
Applications
PD - 96208A
D-Pak
IRLR8256PbF
I-Pak
IRLU8256PbF
G
S
D
G
D
S
GDS
Gate Drain Source
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Benefits
l Very Low RDS(on) at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
V
DSS
R
DS(on)
max
Qg
25V
5.7m
10nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 2.4
R
θJA
Junction-to-Ambient (PCB Mount)
––– 50
R
θJA
Junction-to-Ambient ––– 110
V
°C
°C/W
W
A
0.42
31
300 (1.6mm from case)
-55 to + 175
63
Max.
81
57
325
± 20
25