Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLR8743PBF, MOSFET

www.irf.com 1

08/15/07

IRLR8743PbF

IRLU8743PbF

HEXFET

Power MOSFET

Notes  through  are on page 11

Applications

Benefits

l Very Low RDS(on) at 4.5V V

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Lead-Free

PD - 96123

DSS

DS(on)

max

30V

3.1m

39nC

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage V

Gate-to-Source Voltage

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

= 100°C

Maximum Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.11

θJA

Junction-to-Ambient (PCB Mount)

––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

135

Max.

160

113

640

± 20

0.90

300 (1.6mm from case)

-55 to + 175

D-Pak

IRLR8743PbF

I-Pak

IRLU8743PbF

GDS

Gate Drain Source

Summary of content (11 pages)

PAGE 1
PD - 96123 IRLR8743PbF IRLU8743PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free HEXFET® Power MOSFET VDSS RDS(on) max 3.1m: 30V Qg 39nC D Benefits Very Low RDS(on) at 4.
PAGE 2
IRLR/U8743PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) Min. Typ. Max. Units 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 20 2.4 Gate Threshold Voltage ––– 1.35 3.0 1.9 mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 25A mΩ 3.9 VGS = 4.5V, ID = 20A 2.35 V VDS = VGS, ID = 100µA Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -6.4 ––– ––– 1.
PAGE 3
IRLR/U8743PbF 1000 1000 100 BOTTOM 10 1 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 100 BOTTOM 10 2.5V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 0.1 0.1 1 1 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.
PAGE 4
IRLR/U8743PbF 5.0 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C, Capacitance (pF) C oss = C ds + C gd 10000 Ciss Coss 1000 Crss 4.0 3.0 2.0 1.0 0.0 100 1 10 0 100 10000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 10 15 20 25 30 35 40 45 50 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs.
PAGE 5
IRLR/U8743PbF 180 2.5 VGS(th) , Gate Threshold Voltage (V) Limited By Package 160 ID, Drain Current (A) 140 120 100 80 60 40 20 2.0 ID = 100µA 1.5 1.0 0.5 0 25 50 75 100 125 150 -75 -50 -25 0 175 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.1 0.05 τJ 0.02 0.01 0.
PAGE 6
IRLR/U8743PbF D.U.T RG 20V VGS + V - DD IAS A 0.01Ω tp ID 2.7A 3.7A BOTTOM 20A TOP 1000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 1200 15V Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 800 600 400 200 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms V DS V GS RG Current Regulator Same Type as D.U.T. D.U.T.
PAGE 7
IRLR/U8743PbF D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period + Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRLR/U8743PbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses.
PAGE 9
IRLR/U8743PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information (;$03/( 7+,6 ,6 $1 ,5)5 3$57 180%(5 :,7+ $66(0%/< ,17(51$7,21$/ /27 &2'( ,5)5 $ 5(&7,),(5 $66(0%/(' 21 :: /2*2 ,1 7+( $66(0%/< /,1( $ '$7( &2'( <($5 :((.
PAGE 10
IRLR/U8743PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information (;$03/( 7+,6 ,6 $1 ,5)8 :,7+ $66(0%/< /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( $ 1RWH 3 LQ DVVHPEO\ OLQH SRVLWLRQ LQGLFDWHV /HDG )UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57 180%(5 ,5)8 $ $66(0%/< /27 &2'( '$7( &2'( <($5 :((.
PAGE 11
IRLR/U8743PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.