Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLR9343PBF, MOSFET

www.irf.com 1

12/07/04

Notes  through  are on page 10

Description

This Digital Audio HEXFET

is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

PD - 95386A

Features

l Advanced Process Technology

l Key Parameters Optimized for Class-D Audio

Amplifier Applications

l Low R

DSON

for Improved Efficiency

l Low Q

and Q

for Better THD and Improved

Efficiency

l Low Q

for Better THD and Lower EMI

l 175°C Operating Junction Temperature for

Ruggedness

l Repetitive Avalanche Capability for Robustness and

Reliability

l Multiple Package Options

l Lead-Free

DIGITAL AUDIO MOSFET

-55

DS(ON)

typ. @ V

= -10V

DS(ON)

typ. @ V

= -4.5V

150

typ.

max

175

°C

Key Parameters

IRLR9343PbF

IRLU9343PbF

IRLU9343-701PbF

I-Pak Leadform 701

IRLU9343-701

Refer to page 10 for package outline

D-Pak

IRLR9343

I-Pak

IRLU9343

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage V

Gate-to-Source Voltage

@ T

= 25°C Continuous Drain Current, V

@ -10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Power Dissipation W

= 100°C

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C

STG

Storage Temperature Range

Clamping Pressure

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case

––– 1.9

Junction-to-Ambient (PCB Mounted)

––– 50 °C/W

θJA

Junction-to-Ambient (free air)

––– 110

Max.

-14

-60

±20

-55

-20

-40 to + 175

–––

0.53

Summary of content (11 pages)

PAGE 1
PD - 95386A DIGITAL AUDIO MOSFET IRLR9343PbF IRLU9343PbF IRLU9343-701PbF Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options l Lead-Free l Key Parameters VDS RDS(ON) typ.
PAGE 2
IRLR/U9343PbF & IRLU9343-701PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Parameter -55 ––– ––– -52 ––– ––– Static Drain-to-Source On-Resistance ––– ––– 93 150 105 170 V VGS = 0V, ID = -250µA mV/°C Reference to 25°C, ID = -1mA mΩ VGS = -10V, ID = -3.4A VGS = -4.5V, ID = -2.7A VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient -1.
PAGE 3
IRLR/U9343PbF & IRLU9343-701PbF 100 100 10 BOTTOM VGS -15V -12V -10V -8.0V -5.5V -4.5V -3.0V -2.5V TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) TOP 1 -2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 10 BOTTOM 1 -2.5V ≤ 60µs PULSE WIDTH Tj = 175°C 0.1 0.1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 100.0 2.
PAGE 4
IRLR/U9343PbF & IRLU9343-701PbF 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 100.0 T J = 175°C 10.0 T J = 25°C 1.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 10 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 10msec 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 2.0 10 100 1000 -VDS , Drain-toSource Voltage (V) -VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.
PAGE 5
00 600 EAS, Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance ( mΩ) IRLR/U9343PbF & IRLU9343-701PbF ID = -14A 500 400 300 200 T J = 125°C 100 T J = 25°C 0 ID -4.0A -5.5A BOTTOM -14A TOP 400 300 200 100 0 4.0 6.0 8.0 10.0 25 -VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13. Maximum Avalanche Energy Vs.
PAGE 6
IRLR/U9343PbF & IRLU9343-701PbF D.U.T Driver Gate Drive - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T.
PAGE 7
IRLR/U9343PbF & IRLU9343-701PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN T HE ASSEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in as s embly line position indicates "Lead-Free" IRFU120 12 916A 34 ASSEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 12
PAGE 8
IRLR/U9343PbF & IRLU9343-701PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN THE AS SEMBLY LINE "A" INTERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 78 ASS EMBLY LOT CODE Note: "P" in as sembly line pos ition indicates "Lead-F ree" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 56
PAGE 9
IRLR/U9343PbF & IRLU9343-701PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. www.irf.
PAGE 10
IRLR/U9343PbF & IRLU9343-701PbF I-Pak Leadform Option 701 Package Outline Dimensions are shown in millimeters (inches) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.24mH, RG = 25Ω, IAS = -14A. Pulse width ≤ 400µs; duty cycle ≤ 2%. This only applies for I-Pak, LS of D-Pak is measured between lead and center of die contact Rθ is measured at TJ of approximately 90°C. Contact factory for mounting information Limited by Tjmax. See Figs.
PAGE 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.