Datasheet

1/12/09
www.irf.com 1
HEXFET
®
Power MOSFET
S
D
G
GDS
Gate Drain Source
PD - 97362
IRLS3034-7PPbF
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low R
DS(ON)
at 4.5V V
GS
l Superior R*Q at 4.5V V
GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
D
2
Pak 7 Pin
G
S
S
D
S
S
S
V
DSS
40V
R
DS
(
on
)
typ.
1.0m
Ω
max.
1.4m
Ω
I
D
(Silicon Limited)
380A
c
I
D
(Package Limited)
240A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
kl
–––
0.40
°C/W
R
θ
JA
Junction-to-Ambient
j
––– 40
Max.
380
c
270
c
1540
240
A
°C
300
-55 to + 175
± 20
2.5
250
See Fig. 14, 15, 22a, 22b
380
1.3