Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLU024NPBF, MOSFET HEXFET

HEXFET

Power MOSFET

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 3.3

θJA

Case-to-Ambient (PCB mount)** ––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

Thermal Resistance

DSS

= 55V

DS(on)

= 0.065Ω

= 17A

Description

12/6/04

www.irf.com 1

l Logic-Level Gate Drive

l Surface Mount (IRLR024N)

l Straight Lead (IRLU024N)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Fifth Generation HEXFET

Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the lowest possible on-

resistance per silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient device for use in

a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 17

@ T

= 100°C Continuous Drain Current, V

@ 10V 12 A

Pulsed Drain Current  72

= 25°C Power Dissipation 45 W

Linear Derating Factor 0.3 W/°C

Gate-to-Source Voltage ± 16 V

Single Pulse Avalanche Energy 68 mJ

Avalanche Current 11 A

Repetitive Avalanche Energy 4.5 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD- 95081A

IRLR024NPbF

IRLU024NPbF

D-Pak I-Pak

IRLR024NPbF IRLU024NPbF

Summary of content (11 pages)

PAGE 1
PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A S Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area.
PAGE 2
IRLR/U024NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRLR/U024NPbF 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 10 1 2.5V 20µs PULSE WIDTH TJ = 25°C 0.1 0.1 1 10 A 10 2.5V 1 100 R DS(on) , Drain-to-Source On Resistance (Normalized) 3.0 I D , Drain-to-Source Current (A) TJ = 25°C TJ = 175°C 10 1 V DS = 15V 20µs PULSE WIDTH 4 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 A 100 Fig 2. Typical Output Characteristics 100 3 1 VDS , Drain-to-Source Voltage (V) Fig 1.
PAGE 4
IRLR/U024NPbF 800 C, Capacitance (pF) 400 VGS , Gate-to-Source Voltage (V) Ciss 600 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Coss 200 Crss 0 1 10 100 A I D = 11A V DS = 44V V DS = 28V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 0 4 VDS , Drain-to-Source Voltage (V) 16 20 A Fig 6. Typical Gate Charge Vs.
PAGE 5
IRLR/U024NPbF 20 RD V DS ID , Drain Current (A) VGS 15 RG 10 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD 5V Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM t SINGLE PULSE (THERMAL RESPONSE) Notes: 1.
PAGE 6
15V L VDS D.U.T RG IAS 20V DRIVER + V - DD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit A E AS , Single Pulse Avalanche Energy (mJ) IRLR/U024NPbF 140 TOP 120 BOTTOM ID 4.5A 7.8A 11A 100 80 60 40 20 0 VDD = 25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10 V QGS .3µF D.U.T.
PAGE 7
IRLR/U024NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRLR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in as sembly line pos ition indicates "Lead-Free" IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 12 AS S EMBLY LO
PAGE 9
IRLR/U024NPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 919A 56 78 AS S EMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 56 AS S EMBLY LOT
PAGE 10
IRLR/U024NPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
PAGE 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.