Datasheet

HEXFET
®
Power MOSFET
IRLZ24N
PD - 91357C
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
V
DSS
= 55V
R
DS(on)
= 0.06Ω
I
D
= 18A
S
D
G
T
O
-22
0
AB
07/12/02
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case   3.3
R
θCS
Case-to-Sink, Flat, Greased Surface  0.50  °C/W
R
θJA
Junction-to-Ambient   62
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 18
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 13 A
I
DM
Pulsed Drain Current  72
P
D
@T
C
= 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy  68 mJ
I
AR
Avalanche Current 11 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
Absolute Maximum Ratings