Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLZ34NPBF, MOSFET HEXFET 55V

HEXFET

Power MOSFET

IRLZ34N

PD - 9.1307B

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

l Logic-Level Gate Drive

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

DSS

= 55V

DS(on)

= 0.035Ω

= 30A

TO-220AB

8/25/97

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case –––– –––– 2.2

θCS

Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W

θJA

Junction-to-Ambient –––– –––– 62

Thermal Resistance

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 30

@ T

= 100°C Continuous Drain Current, V

@ 10V 21 A

Pulsed Drain Current   110

= 25°C Power Dissipation 68 W

Linear Derating Factor 0.45 W/°C

Gate-to-Source Voltage ±16 V

Single Pulse Avalanche Energy  110 mJ

Avalanche Current 16 A

Repetitive Avalanche Energy 6.8 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range °C

Soldering Temperature, for 10 seconds 300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Summary of content (8 pages)

PAGE 1
PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
PAGE 2
IRLZ34N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– ––– ––– 1.
PAGE 3
IRLZ34N 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOT TOM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V 100 TOP ID , D ra in -to -S o u rce C u rre n t (A ) ID , D ra in -to -S o u rce C u rre n t (A ) TOP 10 1 2.5 V 2 0µ s PU LSE W ID TH T J = 25 °C 0.1 0.1 1 10 100 10 2 .5V 1 20 µ s PU LSE W ID TH T J = 1 75°C 0.1 A 100 0.1 V D S , Drain-to-S ource V oltage (V) 3.
PAGE 4
IRLZ34N V GS C is s C rs s C iss C os s C , C a p a c ita n c e (p F ) 1200 = = = = 15 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd V G S , G a te -to -S o u rce V o lta g e (V ) 1400 1000 800 C o ss 600 400 C rss 200 0 10 V DS = 44V V DS = 28V 12 9 6 3 FO R TEST CIR CU IT SEE FIG UR E 13 0 A 1 I D = 16A 0 100 V D S , Drain-to-Source V oltage (V) 8 12 16 20 24 28 A 32 Q G , T otal Gate C harge (nC ) Fig 5. Typical Capacitance Vs.
PAGE 5
IRLZ34N 40 VDS I D , Drain Current (A) VGS RD D.U.T. RG 30 + -VDD 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 T C , Case Temperature 150 175 ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1.
PAGE 6
IRLZ34N D.U.T. RG + V - DD IAS 5.0 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 250 L VDS TOP BO TTOM 200 ID 6 .6A 11A 16 A 150 100 50 0 V D D = 2 5V 25 50 A 75 100 125 150 Starting TJ , Junction T emperature (°C) tp VDD Fig 12c. Maximum Avalanche Energy Vs. Drain Current VDS IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V .3µF 5.0 V QGS D.U.T.
PAGE 7
IRLZ34N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRLZ34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) -B - 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) -A - 4 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 ) 6 . 4 7 (. 2 5 5 ) 6 . 1 0 (. 2 4 0 ) 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 ) 1 . 1 5 ( .0 4 5 ) M IN 1 2 1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.