ISOFACE™ ISO1H811G Galvanic Isolated 8 Channel High-Side Switch Datasheet Revision 2.
Edition 2013-05-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
ISOFACE™ ISO1H811G Revision History Page or Item Subjects (major changes since previous revision) Revision 2.4, 2013-05-16 Page 12 Page 12 table 4.1 Extended operating temperature footnote removed Revision 2.3 Page 12 Page 12 table 4.1 Extended operating temperature added Revision 2.2 Page 13 Page 13 table 4.3 updated Page 16 Page 16 table 4.8 updated Revision 2.1 all Data for parallel channels and UL approval added Revision 2.
ISOFACE™ ISO1H811G Coreless Transformer Isolated Digital Output 8 Channel 0.625 A High-Side Switch Product Highlights • • • • Coreless transformer isolated data interface Galvanic isolation 8 High-side output switches 0.625A µC compatible 8-bit parallel peripheral Features Typical Application • • • • • • • • • • • • • • • • • • • • • • • Interface 3.
ISOFACE™ ISO1H811G Pin Configuration and Functionality 1 Pin Configuration and Functionality 1.1 Pin Configuration Pin Symbol 1 N.C. Not connected 2 VCC Positive 3.
ISOFACE™ ISO1H811G Pin Configuration and Functionality 1.2 Pin Functionality driver that is supplied by Vbb. VCC (Positive 3.3/5V logic supply) OUT0 ... OUT7 (High side output channel 0 ... 7) The output high side channels are internally connected to Vbb and controlled by the corresponding data input pins D0 ... D7 in parallel mode. The VCC supplies the input interface that is galvanically isolated from the output driver stage. The input interface can be supplied with 3.3/5V.
Datasheet 7 DIAG D0 D1 D2 D3 D4 D5 D6 D7 WR ISO1H811G < D0 - D7 > Parallel Input Interface Direct Mode Control VCC 100µA High-side Channel 7 Logic Charge Pump Level shifter Rectifier Charge Pump Level Shifter Rectifier Overvoltage Protection Temperature Sensor Overload Protection Current Limitation Limitation of Unclamped Inductive Load Gate Protection Vbb Channel 1 ...
ISOFACE™ ISO1H811G Functional Description 3 Functional Description 3.1 Introduction 3.3.2 The ISOFACE ISO1H811G includes 8 high-side power switches that are controlled by means of the integrated parallel interface. The interface is 8bit µC compatible. Furthermore a direct control mode can be selected that allows the direct control of the outputs OUT0...OUT7 by means of the inputs D0...D7 without any additional logic signal.
ISOFACE™ ISO1H811G Functional Description 3.3.3 Power Transistor Overcurrent Protection IN The outputs are provided with a current limitation that enters a repetitive switched mode after an initial peak current has been exceeded. The initial peak short circuit current limit is set to IL(SCp). During the repetitive mode short circuit current the limit is set to IL(SCr).
ISOFACE™ ISO1H811G Functional Description 3.5 Parallel Interface 3.5.2 uC Control Mode The ISO1H811G contains a parallel interface that can be directly controlled by the microcontroller output ports. The parallel interface can also be switched over to a direct control that allows direct changes of the outputs OUT0 ... OUT7 by means of the corresponding inputs D0 ... D7 without additional logic signals. To activate the parallel direct control mode pin CS and pin WR have to be connected both to ground.
ISOFACE™ ISO1H811G Functional Description 3.6 Parallel Interface Timing CS WR tCSWR t WHCS t CSD tWRPW tDS t DH D0 - D7 DATA ton/off OUTPUT OUT0 - OUT7 Figure 11 Parallel input - output timing diagram 3.7 Transmission Failure Detection There is a failure detection unit integrated to ensure also a stable functionality during the integrated coreless transformer transmission. This unit decides wether the transmitted data is valid or not.
ISOFACE™ ISO1H811G Electrical Characteristics 4 Electrical Characteristics Note: All voltages at pins 2 to 14 are measured with respect to ground GNDCC (pin 15). All voltages at pin 20 to pin 36 and TAB are measured with respect to ground GNDbb (pin 19). The voltage levels are valid if other ratings are not violated. The two voltage domains VCC and Vbb are internally galvanic isolated. 4.
ISOFACE™ ISO1H811G Electrical Characteristics 4.2 Thermal Characteristics Parameter at Tj = -25 ... 125°C, Vbb=15...30V, VCC=3.0...5.5V, unless otherwise specified Symbol Thermal resistance junction - case RthJC Thermal resistance @ min. footprint Rth(JA) 1) Thermal resistance @ 6cm² cooling area Rth(JA) Limit Values Unit Test Condition min. typ. max. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.5 50 K/W 38 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection.
ISOFACE™ ISO1H811G Electrical Characteristics 4.4 Operating Parameters Parameter at Tj = -25 ... 125°C, Vbb=15...30V, VCC=3.0...5.5V, unless otherwise specified Symbol Common mode transient immunity1) Magnetic field immunity1) Voltage domain Vbb (Output interface) Limit Values Unit min. typ. max.
ISOFACE™ ISO1H811G Electrical Characteristics 4.5 Output Protection Functions Parameter1) at Tj = -25 ... 125°C, Vbb=15...30V, VCC=3.0...5.5V, unless otherwise specified Symbol Limit Values min. typ. Unit Test Condition max. Initial peak short circuit current limit, each channel: IL(SCp) Tj = -25°C, Vbb = 30V, tm = 700µs ⎯ ⎯ 1.9 Tj = 25°C ⎯ 1.4 ⎯ Tj = 125°C 0.
ISOFACE™ ISO1H811G Electrical Characteristics 4.7 Input Interface Parameter at Tj = -25 ... 125°C, Vbb=15...30V, VCC=3.0...5.5V, unless otherwise specified Symbol Limit Values Unit Test Condition min. typ. max. 0.3 x VCC Input low state voltage (D0 ... D7, DIS, CS, WR) VIL -0.3 ⎯ Input high state voltage (D0 ... D7, DIS, CS, WR) VIH 0.7 x VCC ⎯ Input voltage hysteresis (D0 ... D7, DIS, CS, WR) VIHys 100 mV Input pull down current (D0 ...
ISOFACE™ ISO1H811G Electrical Characteristics 4.9 Reverse Voltage Parameter at Tj = -25 ... 125°C, Vbb=15...30V, VCC=3.0...5.5V, unless otherwise specified Symbol Reverse voltage1)2) RGND = 0 Ω RGND = 150 Ω -Vbb Diode forward on voltage IF = 1.25A, VDx = low, each channel -VON Limit Values Unit Test Condition min. typ. max. ⎯ ⎯ ⎯ ⎯ 1 45 ⎯ ⎯ 1.2 V 1) defined by Ptot 2) not subject to production test, specified by design 4.
ISOFACE™ ISO1H811G Electrical Characteristics Datasheet 18 Revision 2.
ISOFACE™ ISO1H811G Electrical Characteristics Datasheet 19 Revision 2.
ISOFACE™ ISO1H811G Package Outlines Package Outlines 0.65 0.25 +0.13 15.74 ±0.1 (Heatslug) +0.07 -0.02 B 2.8 6.3 0.1 C (Mold) 5˚ ±3˚ 0.25 0 +0.1 1.1 ±0.1 11 ±0.15 1) 1.3 (Plastic Dual Small Outline Package) 3.25 ±0.1 PG-DSO-36 3.5 MAX. 5 Heatslug 0.95 ±0.15 36x 0.25 M A B C 14.2 ±0.3 0.25 B 19 19 1 18 10 36 5.9 ±0.1 (Metal) 36 3.2 ±0.1 (Metal) Bottom View Index Marking 1 x 45˚ 15.9 ±0.1 1) (Mold) 1) Figure 12 Datasheet A 13.7 -0.
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