ITS41k0S-ME-N Smart High-Side NMOS-Power Switch Data Sheet Rev 1.
Smart High-Side NMOS-Power Switch 1 ITS41k0S-ME-N Overview Features • • • • • • • • • • • • • • Current controlled input Capable of driving all kind of loads (inductive, capacitive and resitive) Negative voltage clamped at output with inductive loads Current limitation Very low standby current Thermal shutdown with restart Overload protection Short circuit protection Overvoltage protection (including load dump) Reverse battery protection Loss of GND and loss of Vbb protection ESD-Protection Improved el
ITS41k0S-ME-N Block Diagram and Terms 2 Block Diagram and Terms ITS41k0S-ME-N 2, 4 VS Control Circuit Temperature Sensor RIN 3 OUT 1 IN Figure 1 Block diagram Voltage- and Current-Definitions: Switching Times and Slew Rate Definitions: IIN ITS41k0S-ME-N 2, 4 IINON 0 VS VOUT IS IINOFF +VS VDS 90% VDS Control Circuit SROFF Temperature Sensor 3 1 40% 30% SR ON IL 10% 0 RL I IN OUT VOUT IN 70% VS RIN VIN Data Sheet t ON t tOFF IL 0 GND Figure 2 t OFF ON OFF t T
ITS41k0S-ME-N Pin Configuration 3 Pin Configuration 3.1 Pin Assignment 4 1 2 Figure 3 Pin configuration top view, PG-SOT223-4 3.2 Pin Definitions and Functions 3 Pin Symbol Function 1 IN Input, activates the power switch in case of connection to GND 2 VS Supply voltage 3 OUT Output to the load 4 VS Supply voltage Data Sheet 4 Rev 1.
ITS41k0S-ME-N General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Table 1 Absolute maximum ratings 1)Tj = 25°C all voltages with respect to ground. Currents flowing into the device unless otherwise specified in chapter “Block Diagram and Terms” Parameter Symbol Values Min. Unit Typ. Max. Note / Test Co ndition 60 V 4.1.
ITS41k0S-ME-N General Product Characteristics 4.2 Functional Range Table 2 Functional Range Parameter Symbol Nominal Operating Voltage VS Values Min. Typ. Max. 4.9 – 60 Unit Note / Test Condition Number V VS increasing 4.2.1 Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.
ITS41k0S-ME-N Electrical Characteristics 5 Electrical Characteristics Table 4 VS = 9V to 60V; Tj = -40°C to 125°C; all voltages with respect to ground. Currents flowing into the device unless otherwise specified in chapter “Block Diagram and Terms”. Typical values at Vs = 13.5V, Tj = 25°C Parameter Symbol Values Min. Typ. Max. – 0.8 1.5 Unit Note / Test Condition Number Ω IOUT= 150mA; Tj = 25°C; 5.0.
ITS41k0S-ME-N Electrical Characteristics Table 4 VS = 9V to 60V; Tj = -40°C to 125°C; all voltages with respect to ground. Currents flowing into the device unless otherwise specified in chapter “Block Diagram and Terms”. Typical values at Vs = 13.5V, Tj = 25°C Parameter Symbol Min. Typ. Max.
ITS41k0S-ME-N Application Information 6 Application Information 6.1 Application Diagram The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty for a certain functionality, condition or quality of the device.
ITS41k0S-ME-N Application Information Special features ITS41k0S-ME-N 2, 4 ZD 1 ITS41k0S-ME-N VS 2, 4 ZD2 ZD1 D1 VDS D1 Control circuit V B att Temperature Sensor RIN M1 3 Temperature Sensor R IN OUT VF M1 Control circuit IREV ZD2 V FZD1 M1 3 1 OUT I REV1 1 IN ZL ZL V ESD V OU T IN VS VREV 6.
ITS41k0S-ME-N Application Information 6.
ITS41k0S-ME-N Application Information 6.
ITS41k0S-ME-N Typical Performance Graphs 7 Typical Performance Graphs Typical Performance Characteristics Transient Thermal Impedance ZthJA versus Pulse Time tp @ 6cm² heatsink area (D= tp/T) Transient Thermal Impedance ZthJA versus Pulse Time tp @ min. footprint (D= tp/T) On-Resistance RDSON versus Junction Temperature TJ @ = VS = 9V; IL =150mA On-Resistance RDSON versus Supply Voltage VS = Vbb @ = IL =150mA Tj =par. 2 3 Vs=9V;IL=150mA Tj [°C]=−40°C;IL=150mA 1.8 Tj [°C]=−25°C;IL=150mA 2.
ITS41k0S-ME-N Typical Performance Graphs Typical Performance Characteristics Switch ON Time tON versus Junction Temperature TJ @ = RL = 270 Ω; VS =par. Switch OFF Time tOFF versus Junction Temperature TJ @ = RL = 270 Ω; VS =par. 60 70 50 60 50 40 tON [μs] tOFF [μs] 40 30 30 20 20 Vs=9V;RL=270Ω 10 10 Vs=13.5V;RL=270Ω Vs=42V;RL=270Ω 0 −40 25 Vs=9..42V;RL=270Ω 0 −40 125 Tj[°C] 25 125 Tj[°C] ON Slewrate SRON versus Junction Temperature TJ @ = RL = 270 Ω; VS =par.
ITS41k0S-ME-N Typical Performance Graphs Typical Performance Characteristics Initial Peak Short Circuit Current Limit ILSCP versus Junction Temperature TJ @ VS=13.5V; tm =100µs Initial Short Circuit Shutdown Time tOFF SC versus Junction Start-Temperature TJSTART ; VS=parameter 3 1.2 10 1 2 10 tOFFSC [ms] ILSCp [A] 0.8 0.6 1 10 0.4 0 10 Vs=13.5V;RL=270Ω 0.2 Vs=24V;RL=270Ω Vs=13.
ITS41k0S-ME-N Typical Performance Graphs Typical Performance Characteristics Stand By Current Consumption ISOFF versus Junction Temperature TJ @ pin IN open 8 Vs=13.5V 7 Vs=42V Vs=60V 6 Isoff [μ] 5 4 3 2 1 0 −40 25 125 Tj [°C] Data Sheet 16 Rev 1.
ITS41k0S-ME-N Package Outlines and Footprint 8 Package Outlines and Footprint 1.6±0.1 6.5 ±0.2 3 ±0.1 A 0.1 MAX. B 1 0.25 M A 2 3 2.3 0.7 ±0.1 4.6 3.5 ±0.2 0.5 MIN. 7 ±0.3 4 0.28 ±0.04 0.25 M B 0...10˚ SOT223-PO V04 Figure 8 PG-SOT223-4 (Plastic Dual Small Outline Package, RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product.
ITS41k0S-ME-N Revision History 9 Revision History Revision Date Changes 1.
Edition 2012-09-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
