Datasheet
Parameter Max. Units
V
DS
Drain- Source Voltage 30 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V ±10
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V ±8.0 A
I
DM
Pulsed Drain Current ±50
P
D
@T
A
= 25°C Power Dissipation 2.5
P
D
@T
A
= 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
E
AS
Single Pulse Avalanche Energy 400 mJ
V
GS
Gate-to-Source Voltage ± 20 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
l Lead-Free
09/22/04
Si4410DYPbF
HEXFET
®
Power MOSFET
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
This N-channel HEXFET
®
Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low on-
resistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
Description
Absolute Maximum Ratings
W
www.irf.com 1
PD - 95168
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
V
DSS
= 30V
R
DS(on)
= 0.0135Ω