Datasheet

Parameter Max. Units
V
DS
Drain- Source Voltage -30 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V -8.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V -6.4 A
I
DM
Pulsed Drain Current -50
P
D
@T
A
= 25°C Power Dissipation 2.5
P
D
@T
A
= 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
10/14/99
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
Si4435DY
HEXFET
®
Power MOSFET
These P-channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
V
DSS
= -30V
R
DS(on)
= 0.020
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD- 93768A
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
SO-8

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