SN 7002 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.
SN 7002 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 350 Therminal resistance, chip-substrate- reverse side 1) RthJSR ≤ 285 DIN humidity category, DIN 40 040 ˚C K/W E IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium Unit 55 / 150 / 56 15 mm x 16.7 mm x 0.
SN 7002 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.2 A Input capacitance 0.1 - 60 80 - 15 25 - 15 25 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.
SN 7002 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 ˚C Inverse diode direct current,pulsed 0.19 - - 0.76 V V SD VGS = 0 V, IF = 0.5 A, Tj = 25 ˚C Data Sheet - ISM TA = 25 ˚C Inverse diode forward voltage - - 4 1 1.2 05.
SN 7002 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.40 0.20 W A 0.32 ID 0.16 0.28 0.14 0.24 0.12 0.20 0.10 0.16 0.08 0.12 0.06 0.08 0.04 0.04 0.02 0.00 0 0.00 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 TA ˚C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.
SN 7002 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 0.45 A ID Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 16 Ptot = 0W k i h jl g f b VGS [V] a 2.0 0.35 0.30 d 0.25 a 0.20 0.15 c b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 c a Ω e RDS (on) 12 10 8 6 d 4 0.10 e f lki gj h 2 VGS [V] = 0.05 a 2.0 0.00 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.
SN 7002 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.5 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 16 4.6 V Ω RDS (on) 4.0 VGS(th) 12 3.6 3.2 10 2.8 2.4 8 98% 98% 2.0 6 typ 1.6 1.2 4 2% typ 0.8 2 0.4 0 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C Tj 160 Tj Typ.