Datasheet

TLE6251D
Electrical Characteristics
Data Sheet 18 Rev. 1.0, 2012-07-27
7 Electrical Characteristics
7.1 Functional Device Characteristics
Table 6 Electrical Characteristics
4.5 V <
V
CC
< 5.5 V; 3.0 V < V
IO
< 5.5 V; R
L
=60Ω; -40 °C<T
j
<150°C; all voltages with respect to ground;
positive current flowing into pin; unless otherwise specified.
Pos. Parameter Symbol Limit Values Unit Remarks
Min. Typ. Max.
Current Consumption
7.1.1 Current consumption at
V
CC
normal-operating mode
I
CC
–26mArecessive state, V
TxD
= V
IO
,
STB = “low”;
7.1.2 Current consumption at
V
CC
normal-operating mode
I
CC
35 60 mA “dominant” state, V
TxD
=0V.
STB = “low”;
7.1.3 Current consumption at
V
IO
-
normal-operating mode
I
VIO
––1mASTB=low;
7.1.4 Current consumption at
V
CC
stand-by mode
I
VCC(STB)
––5μA V
TxD
= V
IO
, V
CC
= 5 V;
7.1.5 Current consumption at
V
IO
stand-by mode
I
VIO(STB)
––25μA V
IO
=5V, V
TxD
= V
IO
;
7.1.6 Current consumption at
V
IO
stand-by mode
I
VIO(STB)
–1521μA V
IO
=5V, V
TxD
= V
IO
,
T
J
=4C;
Supply Resets
7.1.7
V
CC
undervoltage monitor V
CC(UV)
3.8 4.0 4.3 V rising edge;
7.1.8
V
CC
undervoltage monitor
hysteresis
V
CC(UV,H)
–150–mV
1)
7.1.9
V
IO
undervoltage monitor V
IO(UV)
1.2 2.0 3.0 V rising edge;
7.1.10
V
IO
undervoltage monitor
hysteresis
V
CC(UV,H)
–200–mV
1)
7.1.11
V
CC
and V
IO
undervoltage delay
time
t
Delay(UV)
––50μs
1)
(see Figure 7);
Receiver Output: RxD
7.1.13 “High” level output current
I
RD,H
-4-2mAV
RxD
= V
IO
- 0,4 V,
V
DIFF
<0.5V;
7.1.14 “Low” level output current
I
RD,L
24–mAV
RxD
=0.4V,
V
DIFF
>0.9V;
Transmission Input: TxD
7.1.15 “High” level input voltage
threshold
V
TD,H
–0.5 ×
V
IO
0.7 ×
V
IO
V “recessive” state;
7.1.16 “Low” level input voltage
threshold
V
TD,L
0.3 ×
V
IO
0.4 ×
V
IO
V “dominant” state;
7.1.18 TxD pull-up resistance
R
TD
10 25 50 kΩ
7.1.19 TxD input hysteresis
V
HYS(TxD)
–800–mV
1)
7.1.20 TxD permanent dominant
disable time
t
TxD
4.5 16 ms