Datasheet

BAL 74

Oct-04-19991

Silicon Switching Diode

• For high-speed switching applications

VPS05161

EHA00001

Type Marking Pin Configuration Package

BAL 74 JCs 1 = n.c. 2 = A 3 = C SOT-23

Maximum Ratings

Parameter Symbol UnitValue

Diode reverse voltage

V50

Peak reverse voltage

250 mAForward current

Surge forward current, t = 1 µs I

A4.5

Total power dissipation, T

= 54 °C P

tot

mW370

150

°CJunction temperature

Storage temperature

-65 ... 150

Thermal Resistance

Junction - ambient

thJA

≤ 330

K/W

≤ 260

Junction - soldering point

thJS

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm

PAGE 1
BAL 74 Silicon Switching Diode 3 • For high-speed switching applications 2 1 3 VPS05161 2 EHA00001 Type Marking BAL 74 JCs Pin Configuration 1 = n.c. 2=A Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM 50 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS = 54 °C Ptot 370 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ...
PAGE 2
BAL 74 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 - - VF - - 1 IR - - 0.
PAGE 3
BAL 74 Forward current IF = f (TA *;TS ) Reverse current IR = f (TA) * Package mounted on epoxy 300 BAL 74 EHB00001 BAL 74 5 EHB00002 10 nA ΙF ΙR mA V R = 70 V 10 4 max. 5 200 TS 70 V 10 3 TA 25 V 5 100 typ. 10 2 5 0 0 50 100 ˚C 10 1 150 0 50 100 TA ; TS Peak forward current IFM = f (t p) TA = 25°C TA = 25°C ΙF BAL 74 150 TA Forward current IF = f (VF ) 150 ˚C EHB00003 10 2 Ι FM mA BAL 74 EHB00004 D = 0.005 0.01 0.02 0.05 0.1 0.
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BAL 74 Forward voltage VF = f (TA) 1.0 BAL 74 V EHB00005 Ι F = 100 mA VF 10 mA 1 mA 0.5 0.