Datasheet

BAS 16

Oct-07-19991

Silicon Switching Diode

• For high-speed switching applications

VPS05161

EHA07002

Type Marking Pin Configuration Package

BAS 16 A6s 1 = A 2 n.c. 3 = C SOT-23

Maximum Ratings

Parameter Symbol UnitValue

Diode reverse voltage

V75

Peak reverse voltage

250 mAForward current

Surge forward current, t = 1 µs I

4.5

Total power dissipation, T

= 54 °C P

tot

mW370

150

°CJunction temperature

Storage temperature

-65 ... 150

Thermal Resistance

Junction - ambient

thJA

≤ 330

K/W

≤ 260

Junction - soldering point

thJS

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm

PAGE 1
BAS 16 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking BAS 16 A6s Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 250 Surge forward current, t = 1 µs IFS 4.5 Total power dissipation, TS = 54 °C Ptot 370 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V mA -65 ...
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BAS 16 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. - - - DC characteristics Breakdown voltage V(BR) V I(BR) = 100 µA Forward voltage mV VF IF = 1 mA - - 715 IF = 10 mA - - 855 IF = 50 mA - - 1000 IF = 150 mA - - 1250 - - 1 VR = 25 V, TA = 150 °C - - 30 VR = 75 V - - 50 Vfr - - 1.
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BAS 16 Forward current IF = f (TA *;TS ) Reverse current IR = f (TA) * Package mounted on epoxy BAS 16 300 BAS 16 EHB00021 ΙR ΙF EHB00022 10 5 nA V R = 70 V mA 10 4 max. 5 200 70 V 10 3 TA TS 5 25 V 100 typ. 10 2 5 0 0 50 100 C 10 1 150 0 50 100 TA ;TS Forward current IF = f (VF ) Peak forward current IFM = f (t p) TA = 25°C TA = 25°C 150 BAS 16 10 2 EHB00023 BAS 16 150 EHB00024 D = 0.005 0.01 0.02 0.05 0.1 0.
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BAS 16 Forward voltage VF = f (TA) 1.0 VF BAS 16 V EHB00025 Ι F = 100 mA 10 mA 1 mA 0.5 0.