Datasheet

BAS 28

Oct-07-19991

Silicon Switching Diode Array

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For high-speed switching applications

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Electrical insulated diodes

VPS05178

EHA07008

Type Marking Pin Configuration Package

SOT-143BAS 28 JTs 1 = C1 2 = C2 3 = A2 4 = A1

Maximum Ratings

Parameter Symbol Value Unit

Diode reverse voltage

75 V

Peak reverse voltage

Forward current

200 mA

Surge forward current, t = 1

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s I

4.5 A

Total power dissipation, T

= 31 °C P

tot

330 mW

Junction temperature

150 °C

Storage temperature

-65 ... 150

Thermal Resistance

Junction - ambient

thJA

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500

K/W

Junction - soldering point

thJS

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360

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm

PAGE 1
BAS 28 Silicon Switching Diode Array 3 For high-speed switching applications Electrical insulated diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAS 28 JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 200 mA Surge forward current, t = 1 s IFS 4.
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BAS 28 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max.
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BAS 28 Forward current IF = f (TA *;TS ) Reverse current IR = f (TA) * Package mounted on epoxy 300 BAS 28 EHB00033 10 nA ΙF 5 BAS 28 EHB00034 ΙR mA V R = 70 V 10 200 4 max. 5 10 70 V 3 5 TS 100 25 V typ. 10 2 TA 5 0 0 50 100 ˚C 10 1 150 0 50 100 Forward current IF = f (VF ) Peak forward current IFM = f (t p) TA = 25°C TA = 25°C BAS 28 150 TA TA ; TS 150 C 10 2 EHB00035 Ι FM ΙF mA BAS 28 EHB00036 D = 0.005 0.01 0.02 0.05 0.1 0.
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BAS 28 Forward voltage VF = f (TA) 1.0 BAS 28 V EHB00037 Ι F = 100 mA VF 10 mA 1 mA 0.5 0.