Datasheet

BTS711L1
Semiconductor Group 10 2003-Oct-01
Inductive load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
E
AS
bb
L
R
E
Load
R
L
L
{
L
Z
Energy stored in load inductance:
E
L
=
1
/
2
·L·I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
= V
ON(CL)
·i
L
(t) dt,
with an approximate solution for R
L
> 0
Ω:
E
AS
=
I
L
· L
2
·R
L
(V
bb
+ |V
OUT(CL)
|) ln (1+
I
L
·R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off (one channel)
5)
L = f (I
L
); T
j,start
=
150°C, V
bb
= 12 V, R
L
= 0 Ω
L [mH]
1
10
100
1000
11.522.53
I
L
[A]
Typ. on-state resistance
R
ON
= f (V
bb
,T
j
); I
L
= 1.8 A, IN = high
R
ON
[mOhm]
0
50
100
150
200
250
300
350
400
450
500
0 10203040
Tj = 150°C
85°C
25°C
-40°C
V
bb
[V]
Typ. open load detection current
I
L(OL)
= f (V
bb
,T
j
); IN = high
I
L(OL)
[mA]
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
no load detection not specified
for V
bb
< 6 V
T
j
= 150°C
85°C
25°C
-40°C
V
bb
[V]