Datasheet

BTS711L1
Semiconductor Group 4 2003-Oct-01
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, V
bb
= 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (V
bb
to OUT)
I
L
= 1.8 A each channel, T
j
= 25°C:
T
j
= 150°C:
two parallel channels, T
j
= 25°C:
four parallel channels, T
j
= 25°C:
R
ON
--
165
320
83
42
200
400
100
50
mΩ
Nominal load current one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB
5)
, T
a
= 85°C, T
j
≤ 150°C
I
L(NOM)
1.7
2.6
4.1
1.9
2.8
4.4
-- A
Output current while GND disconnected or pulled
up; V
bb
= 30 V, V
IN
= 0, see diagram page 9
I
L(GNDhigh)
-- -- 10 mA
Turn-on time to 90% V
OUT
:
Turn-off time to 10% V
OUT
:
R
L
= 12 Ω, T
j
=-40...+150°C
t
on
t
off
80
80
200
200
400
400
µs
Slew rate on
10 to 30% V
OUT
, R
L
= 12 Ω, T
j
=-40...+150°C:
dV/dt
on
0.1 -- 1 V/µs
Slew rate off
70 to 40% V
OUT
, R
L
= 12 Ω, T
j
=-40...+150°C:
-dV/dt
off
0.1 -- 1 V/µs
Operating Parameters
Operating voltage
7)
T
j
=-40...+150°C: V
bb(on)
5.0 -- 34 V
Undervoltage shutdown T
j
=-40...+150°C: V
bb(under)
3.5 -- 5.0 V
Undervoltage restart T
j
=-40...+25°C:
T
j
=+150°C:
V
bb(u rst)
-- -- 5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 14 T
j
=-40...+150°C:
V
bb(ucp)
-- 5.6 7.0 V
Undervoltage hysteresis
∆V
bb(under)
= V
bb(u rst)
- V
bb(under)
∆V
bb(under)
-- 0.2 -- V
Overvoltage shutdown T
j
=-40...+150°C: V
bb(over)
34 -- 43 V
Overvoltage restart T
j
=-40...+150°C: V
bb(o rst)
33 -- -- V
Overvoltage hysteresis T
j
=-40...+150°C: ∆V
bb(over)
-- 0.5 -- V
Overvoltage protection
8)
T
j
=-40...+150°C:
I
bb
= 40 mA
V
bb(AZ)
42 47 -- V
7)
At supply voltage increase up to V
bb
= 5.6 V typ without charge pump, V
OUT
≈V
bb
- 2 V
8)
see also V
ON(CL)
in circuit diagram on page 8.