Datasheet

BTS711L1
Semiconductor Group 8 2003-Oct-01
Input circuit (ESD protection), IN1...4
IN
GND
I
R
ESD-ZD
I
I
I
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a
drift of the zener voltage (increase of up to 1 V).
Status output, ST1/2 or ST3/4
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6.1 V typ., max 5.0 mA;
R
ST(ON)
< 380 Ω at 1.6 mA, ESD zener diodes are not to
be used as voltage clamp at DC conditions. Operation in
this mode may result in a drift of the zener voltage
(increase of up to 1 V).
Inductive and overvoltage output
clamp, OUT1...4
+V
bb
OUT
PROFET
V
Z
V
ON
Power GND
V
ON
clamped to V
ON(CL)
= 47 V typ.
Overvoltage protection of logic part
GND1/2 or GND3/4
+ V
bb
IN
ST
ST
R
GND
GND
R
Signal GND
Logic
V
Z2
IN
R
I
V
Z1
V
Z1
= 6.1 V typ., V
Z2
= 47 V typ., R
I
= 3.5 kΩ typ.,
R
GND
= 150 Ω
Reverse battery protection
GND
Logic
ST
R
IN
ST
± 5V
OUT
L
R
Power GND
GND
R
Signal GND
Power
Inverse
I
R
V
bb
-
Diode
R
GND
= 150 Ω, R
I
= 3.5 kΩ typ,
Temperature protection is not active during inverse
current operation.
.