Smart High-Side Power Switch Smart High-Side Power Switch PROFET BTS721L1 Data Sheet Rev. 1.
Smart High-Side Power Switch BTS721L1 Smart Four Channel Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Elec
Smart High-Side Power Switch BTS721L1 Block diagram Four Channels; Open Load detection in on state; 9ROWDJH VRXUFH 2YHUYROWDJH SURWHFWLRQ &XUUHQW OLPLW 9 EE *DWH SURWHFWLRQ 9 /RJLF ,1 ,1 67 6LJQDO *1' &KLS (6' 9ROWDJH /HYHO VKLIWHU VHQVRU 5HFWLILHU /RJLF &KDUJH SXPS &KDUJH SXPS /LPLW IRU XQFODPSHG LQG ORDGV &XUUHQW OLPLW 7HPSHUDWXUH VHQVRU *DWH SURWHFWLRQ /LPLW IRU XQFODPSHG LQG ORDGV 2SHQ ORDG 6KRUW WR 9EE GHWHFWLRQ &KLS 287 2SHQ
Smart High-Side Power Switch BTS721L1 Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Load current (Short-circuit current, see page 5) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 Ω, td = 200 ms; IN = low or high, each channel loaded with RL = 4.
Smart High-Side Power Switch BTS721L1 Electrical Characteristics Parameter and Conditions, each of the four channels Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) each channel, Tj = 25°C: RON IL = 2 A Tj = 150°C: two parallel channels, Tj = 25°C: four parallel channels, Tj = 25°C: Nominal load current one channel active: two parallel channels active: four parallel channels active: 5) Device on PCB , Ta = 85°C,
Smart High-Side Power Switch BTS721L1 Parameter and Conditions, each of the four channels Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit -- -- 12 µA --- 2 8 3 12 mA each channel, Tj =-40°C: IL(SCp) 11 18 25 9 14 22 Tj =25°C: 5 8 14 Tj =+150°C: two parallel channels twice the current of one channel four parallel channels four times the current of one channel Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) -8 --8 -two parallel channel
Smart High-Side Power Switch BTS721L1 Parameter and Conditions, each of the four channels Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Diagnostic Characteristics Open load detection current, (on-condition) 20 -400 each channel, Tj = -40°C: I L (OL) 20 -300 Tj = 25°C: 20 -300 Tj = 150°C: twice the current of one channel two parallel channels four times the current of one channel four parallel channels 13 ) Open load detection voltage Tj =-40..
Smart High-Side Power Switch BTS721L1 Truth Table Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2) Chip 1 Chip 2 IN1 IN3 IN2 IN4 OUT1 OUT3 OUT2 OUT4 L L H H L L H L H L H L H X L L H H Z Z H L H L H L H X L H X L L H L L H L H X L H X H H H Z Z H L H X L H X L X H L H X X X L L H L H X X X L H X L H X L L L L L X X L H H H L L L X X L L L ST1/2 ST3/4 BTS 721L1 Normal operation Open load Channel 1 (3) Channel 2 (4) Short circuit to Vbb Channel 1 (3) Channel 2 (4) Ove
Smart High-Side Power Switch BTS721L1 Input circuit (ESD protection), IN1...4 ,1 5 Overvoltage protection of logic part GND1/2 or GND3/4 9 EE , (6' =' , , 9 5, ,1 = ,1 , /RJLF *1' 67 5 67 9 ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). = *1' 5 *1' 6LJQDO *1' Status output, ST1/2 or ST3/4 VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.
Smart High-Side Power Switch BTS721L1 Open-load detection, OUT1...4 GND disconnect with GND pull up ON-state diagnostic condition: VON < RON·IL(OL); IN high (channel 1/2 or 3/4) 9 EE 9 ,1 9 921 21 ,1 ,1 9EE ,1 352)(7 67 *1' 287 287 287 2SHQ ORDG GHWHFWLRQ /RJLF XQLW 9 9 EE 9 67 *1' Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. OFF-state diagnostic condition: VOUT > 3 V typ.
Smart High-Side Power Switch BTS721L1 Inductive load switch-off energy dissipation ( EE ( $6 (/RDG 9EE ,1 352)(7 287 / 67 *1' =/ ^ 5 (/ (5 / Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L (V + |VOUT(CL)|) 2·RL bb OQ (1+ |V IL·RL OUT(CL)| ) Maximum allowable load inductance for a single switch off (one channel)5) / I ,/
Smart High-Side Power Switch BTS721L1 Typ. on-state resistance Typ. standby current RON [mOhm] Ibb(off) [µA] ; Vbb = 9...34 V, IN1...4 = low ; IL = 2 A, IN = high Tj [°C] Vbb [V] Typ. initial short circuit shutdown time Typ. open load detection current ; Vbb =12 V IN = high IL(OL) [mA] t o ff(S C ) [ms ec ] 16 14 12 10 8 6 4 2 0 -40 -25 0 25 50 75 100 125 15 T j , s ta rt Vbb [V] Data Sheet 12 Rev. 1.
Smart High-Side Power Switch BTS721L1 Timing diagrams Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too.
Smart High-Side Power Switch BTS721L1 Figure 5a: Open load: detection in ON-state, open load occurs in on-state Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) ,1 ,1 ,1 FKDQQHO QRUPDO RSHUDWLRQ , , / / , / 6&S 9287 , / 6&U FKDQQHO RSHQ ORDG ,/ W 67 RII 6& W G 67 2/ RSHQ ORDG QRUPDO ORDG W G 67 2/ W G 67 2/ W G 67 2/ 67 W W td(ST OL1) = 30 µs typ.
Smart High-Side Power Switch BTS721L1 Figure 6b: Undervoltage restart of charge pump Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load RII VWDWH 9 287 , / EE X UVW 9 67 W W d(ST) G 67 9 9 FKDQQHO RSHQ ORDG 9 W G 67 2/ 9 EE RYHU RII VWDWH channel 2: normal operation RQ VWDWH IN2 921 &/ 9 RQ ,1 EE R UVW EE X FS EE XQGHU 9 EE W IN = high, normal load conditions. Charge pump starts at Vbb(ucp) = 5.6 V typ.
Smart High-Side Power Switch BTS721L1 1.27 0.35 8˚ ma x 7.6 -0.2 1) +0.09 0.35 x 45˚ 0.23 2.65 max 2.45 -0.2 0.2 -0.1 Package Outlines 0.4 +0.8 +0.15 2) 0.2 24x 20 0.1 10.3 ±0.3 11 GPS05094 1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.
Smart High-Side Power Switch BTS721L1 Revision History Version Date Changes Rev. 1.3 2010-03-16 page 6: changed reference to the timing diagram Rev. 1.2 2009-07-21 page 1: added new coverpage page 6: Initial short circuit shutdown time changed: toff(SC) -40 °C to 15 ms toff(SC) 25 °C to 12 ms page 12: changed graphic V1.1 2007-08-30 Creation of the green datasheet.
Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 3/16/10. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).
