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2006-03-09

Page 1

ISP 762 T

Smart Power High-Side-Switch

for Industrial Applications

Product Summary

Overvoltage protection V

(

)

41 V

Operating voltage V

(

)

5 ... 34 V

On-state resistance R

100 mΩ

Nominal load current I

(

nom

)

2 A

Operating temperature T

-30...+85 °C

Features

• Overload protection

• Current limitation

• Short circuit protection

• Thermal shutdown with restart

• ESD - Protection

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection with external resistor

• CMOS compatible input

• Loss of GND and loss of V

protection

• Very low standby current

PG-DSO-8

Application

• All types of resistive, inductive and capacitive loads

• µC compatible power switch for 12 V and 24 V DC industrial applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input,

monolithically integrated in Smart SIPMOS



technology.

Providing embedded protective functions.

Summary of content (16 pages)

PAGE 1
ISP 762 T Smart Power High-Side-Switch for Industrial Applications Features Product Summary • Overload protection Overvoltage protection Vbb(AZ) 41 V • Current limitation Operating voltage Vbb(on) 5 ... 34 V • Short circuit protection On-state resistance RON • Thermal shutdown with restart Nominal load current IL(nom) • ESD - Protection Operating temperature Ta 100 mΩ 2 A -30...
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ISP 762 T Block Diagram + V bb Voltage Overvoltage Current Gate source protection limit protection V Logic Charge pump Level shifter Rectifier Limit for unclamped ind.
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ISP 762 T Maximum Ratings at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Supply voltage Vbb 40 Supply voltage for full short circuit protection Vbb(SC) Vbb Unit V Tj = -40...+150°C Continuous input voltage VIN -10 ... +16 Load current (Short - circuit current, see page 5) IL self limited Current through input pin (DC) I IN ±5 mA Junction temperature Tj 150 °C Operating temperature Ta -30...+85 Storage temperature T stg -40 ...
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ISP 762 T Electrical Characteristics Parameter and Conditions Symbol at Tj = -40...+150°C, V bb = 13,5V, unless otherwise specified Values min. typ. Unit max. Load Switching Capabilities and Characteristics On-state resistance RON mΩ T j = 25 °C, I L = 2 A, V bb = 9...40 V - 70 100 T j = 150 °C - 140 200 IL(nom) 2 2.4 - A to 90% V OUT ton - 90 170 µs to 10% V OUT toff - 90 230 10 to 30% V OUT, dV/dton - 0.8 1.7 70 to 40% V OUT, -dV/dtoff - 0.8 1.
PAGE 5
ISP 762 T Electrical Characteristics Parameter and Conditions Symbol at Tj = -40...+150°C, Vbb = 13,5V, unless otherwise specified Values min. typ. Unit max.
PAGE 6
ISP 762 T Electrical Characteristics Parameter and Conditions Symbol at Tj = -40...+150°C, Vbb = 13,5V, unless otherwise specified Values Unit min. typ. max. VIN(T+) - - 2.2 VIN(T-) 0.8 - - Input threshold hysteresis ∆V IN(T) - 0.3 - Off state input current (see page 12) I IN(off) 1 - 25 I IN(on) 3 - 25 1.5 3.5 5 Input Input turn-on threshold voltage V (see page 12) Input turn-off threshold voltage (see page 12) µA VIN = 0.
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ISP 762 T Terms Inductive and overvoltage output clamp Ibb + V bb V Z Vbb I IN IL IN PROFET V VON ON OUT OUT V GND GND IN V bb R IGND VOUT GND VON clamped to 47V typ. Input circuit (ESD protection) R IN Overvoltage protection of logic part + V bb I V ESD- ZD I I I IN Z2 RI L o gic GND V Z1 The use of ESD zener diodes as voltage clamp at DC conditions is not recommended GND R GN D S ignal GND Reverse battery protection - V bb VZ1 =6.1V typ., VZ2 =Vbb(AZ) =47V typ., RI=3.
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ISP 762 T Vbb disconnect with charged inductive GND disconnect load Vbb Vbb IN high OUT PROFET IN bb V OUT GND GND V PROFET V GND IN V bb GND disconnect with GND pull up Inductive Load switch-off energy dissipation Vbb IN PROFET OUT E bb E AS GND E Load Vbb V bb V IN V GND IN PROFET OUT L = GND ZL { R EL ER L Energy stored in load inductance: EL = ½ * L * IL2 While demagnetizing load inductance, the enérgy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) * iL(t)
PAGE 9
ISP 762 T Typ. transient thermal impedance Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Z thJA=f(tp) @ min. footprint Parameter: D=tp/T Parameter: D=tp/T 10 2 10 2 D=0.5 K/W D=0.5 K/W D=0.2 D=0.2 10 1 D=0.1 10 1 D=0.02 10 0 D=0.02 10 0 D=0.01 10 -1 D=0.05 Z thJA ZthJA D=0.05 D=0 D=0.1 D=0.
PAGE 10
ISP 762 T Typ. turn on time Typ. turn off time ton = f(Tj ); RL = 47Ω toff = f(Tj); RL = 47Ω 160 160 32V µs µs 9V 9V 120 13.5V toff t on 120 100 100 32V 80 80 60 60 40 40 20 20 0 -40 -20 0 20 40 60 80 100 120 0 -40 -20 °C 160 0 20 40 60 80 100 120 Tj Tj Typ. slew rate on Typ. slew rate off dV/dton = f(T j) ; RL = 47 Ω dV/dtoff = f(Tj); R L = 47 Ω 2 2 V/µs V/µs 1.6 -dV dtoff 1.6 dV dton °C 160 1.4 1.4 1.2 1.2 1 1 0.8 0.8 32V 0.6 0.6 13.5V 0.
PAGE 11
ISP 762 T Typ. standby current Typ. leakage current Ibb(off) = f(Tj ) ; Vbb = 32V ; VIN = low I L(off) = f(Tj) ; Vbb = 32V ; VIN = low 2 7 µA µA 5 I L(off) I bb(off) 1.6 4 1.4 1.2 1 3 0.8 0.6 2 0.4 1 0.2 0 -40 -20 0 20 40 60 80 100 120 0 -40 -20 °C 160 0 20 40 60 80 100 120 Tj °C 160 Tj Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time IL(SCp) = f(Tj) ; Vbb = 20V toff(SC) = f(Tj,start) ; Vbb = 20V 3.
PAGE 12
ISP 762 T Typ. input current Typ. input current IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high I IN = f(VIN); V bb = 13.5V VINlow ≤ 0,7V; VINhigh = 5V 200 14 µA µA 150°C 160 10 IIN on IIN 140 8 -40...25°C 120 100 6 off 80 60 4 40 2 20 0 -40 -20 0 20 40 60 80 100 120 0 0 °C 160 2 4 8 V VIN Tj Typ. input threshold voltage Typ. input threshold voltage VIN(th) = f(Tj ) ; Vbb = 13,5V VIN(th) = f(V bb) ; Tj = 25°C 2 2 V V 1.4 off 1.2 1.6 VIN(th) V IN(th) on on 1.
PAGE 13
ISP 762 T Maximum allowable load inductance Maximum allowable inductive switch-off for a single switch off energy, single pulse L = f(IL); Tjstart =150°C, Vbb=13.5V, RL=0Ω EAS = f(I L); T jstart = 150°C, Vbb = 13,5V 2500 3000 mH mJ L EAS 2000 1500 1500 1000 1000 500 500 0 0 0.5 1 1.5 0 0 2.5 A IL 0.5 1 1.5 2.
PAGE 14
ISP 762 T Timing diagrams Figure 2b: Switching a lamp, Figure 1a: Vbb turn on: IN IN OUT V bb I V OUT L t t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition Figure 2c: Switching an inductive load IN IN V V OUT OUT 90% t on d V /d to n 10% d V /d to f f t o ff I IL L t t Page 14 2006-03-09
PAGE 15
ISP 762 T Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling Figure 5: Undervoltage restart of charge pump IN Vo n t I L I L(SCp) V b b( u c p ) I L(SCr) Vbb( under ) tm t off(SC) Vbb t Heating up of the chip may require several milliseconds, depending on external conditions.
PAGE 16
ISP 762 T Package and ordering code all dimensions in mm Package: Ordering code: PG-DSO-8 SP000221228 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area ) as a reference for max. power dissipation Ptot nominal load current IL(nom) and thermal Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved.