Datasheet

2009-12-01Rev. 2.8
Page 1
SPP20N60S5
Cool MOS™ Power Transistor
V
DS
600 V
R
DS(on)
0.19 Ω
I
D
20 A
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
PG-TO220
2
P-TO220-3-1
2
3
1
Type
Package
Ordering Code
SPP20N60S5
PG-TO220
Q67040-S4751
Marking
20N60S5
Maximum Ratings
Parameter
Symbol Value Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
20
13
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
40
Avalanche energy, single pulse
I
D
= 10 A, V
DD
= 50 V
E
AS
690 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
= 20 A, V
DD
= 50 V
E
AR
1
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
20 A
Gate source voltage V
GS
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±30
Power dissipation, T
C
= 25°C P
tot
208 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C