Datasheet

Datasheet 81
Thermal Specifications and Design Considerations
NOTES:
1. Intel does not support or recommend operation of the thermal diode under reverse bias.
2. Same as I
FW
in Table 28.
3. Preliminary data. Will be characterized across a temperature range of 50–80 °C.
4. Not 100% tested. Specified by design characterization.
5. The ideality factor, nQ, represents the deviation from ideal transistor model behavior as
exemplified by the equation for the collector current:
I
C
= I
S
* (e
qV
BE
/n
Q
kT
–1)
Where I
S
= saturation current, q = electronic charge, V
BE
= voltage across the transistor
base emitter junction (same nodes as VD), k = Boltzmann Constant, and T = absolute
temperature (Kelvin).
6. The series resistance, R
T,
provided in the Diode Model Table (Table 28) can be used for
more accurate readings as needed.
The Intel
®
Celeron
®
Dual-Core processor E1000 series does not support the diode
correction offset that exists on other Intel processors.
Table 29. Thermal “Diode” Parameters using Transistor Model
Symbol Parameter Min Typ Max Unit Notes
I
FW
Forward Bias Current 5 — 200 µA 1, 2
I
E
Emitter Current 5 — 200
n
Q
Transistor Ideality 0.997 1.001 1.005 - 3, 4, 5
Beta 0.391 — 0.760 3, 4
R
T
Series Resistance 2.79 4.52 6.24 Ω 3, 6
Table 30. Thermal Diode Interface
Signal Name Land Number
Signal
Description
THERMDA AL1 diode anode
THERMDC AK1 diode cathode