Datasheet

Figure 5. V
CCIN
Overshoot Example Waveform
0 5 10 15 20 25 30
Voltage [V]
Time [us]
VID + V
OS_MAX
T
OS_MAX
V
OS_MAX
V
CCIN_MAX (I1)
V
CCIN_MAX
+ V
OS_MAX
V
CCIN_MAX
Note:
1. V
OS_MAX
is the measured overshoot voltage above V
CCIN_MAX
.
2. T
OS_MAX
is the measured time duration above V
CCIN_MAX
.
3. V
CCIN_MAX
= VID + TOB
Signal DC Specifications
For additional specifications, refer to Related Publications on page 9.
DDR4 Signal DC Specifications
Symbol
Parameter Min Nom Max Units Notes
1
I
IL
Input Leakage Current -1.4 +1.4 mA 9
Data Signals
R
ON
DDR4 Data Buffer
On Resistance
27 33 ohm 6
Data ODT On-Die Termination
for Data Signals
45 55 ohm 8
Reference Clock and Command Signals
V
OL
Output Low Voltage (V
CCD
/ 2)* (R
ON
/
(R
ON
+R
VTT_TERM
))
V 2, 7
V
OH
Output High Voltage V
CCD
- ((V
CCD
/ 2)* (R
ON
/
(R
ON
+R
VTT_TERM
))
V 2, 5, 7
Data Signals
continued...
2.9.3
2.9.3.1
Intel
®
Xeon
®
Processor E5-1600 and E5-2600 v3 Product Families—Electrical Specifications
Intel
®
Xeon
®
Processor E5-1600 and E5-2600 v3 Product Families, Volume 1 of 2, Electrical
Datasheet September 2014
36 Order No.: 330783-001