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ManualsBrandsIR ManualsDriversHigh Side/Low Side Power MOSFET / IGBT Driver SOIC
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Features
· Floating channel designed for bootstrap operation
Fully operational up to +200V
Tolerant to negative transient voltage, dV/dt immune
· Gate drive supply range from 10V to 20V
· Independent low and high side channels
· Input logicHIN/LIN active high
· Undervoltage lockout for both channels
· 3.3V and 5V input logic compatible
· CMOS Schmitt-triggered inputs with pull-down
· Matched propagation delay for both channels
· Also available LEAD-FREE (PbF)
Packages
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
200V max.
I
O
+/- 1.0A /1.0A typ.
V
OUT
10 - 20V
t
on/off
80 & 60 ns typ.
Delay Matching 20 ns max.
IR2011(
S) & (PbF
)
www.irf.com 1
Typical Connection
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
Data Sheet No.PD60217 revB
Applications
· Audio Class D amplifiers
· High power DC-DC SMPS converters
· Other high frequency applications
Description
The IR2011 is a high power, high speed power MOSFET driver with independent high
and low side referenced output channels, ideal for Audio Class D and DC-DC converter
applications. Logic inputs are compatible with standard CMOS or LSTTL output, down
to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be used to drive an N-channel
power MOSFET in the high side configuration which operates up to 200 volts. Propri-
etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con-
struction.
8-Lead SOIC
IR2011S
200V
TO
LOAD
V
CC
COM
LIN
HIN
V
S
V
B
HO
HIN
COM
V
CC
LIN
LO
18
45
8-Lead PDIP
IR2011

Summary of content (17 pages)