Datasheet

Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• Internally set deadtime
• High side output in phase with input
• Also available LEAD-FREE
Typical Connection
Data Sheet No. PD60028-M
HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/- 200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.) 750 & 150 ns
Deadtime (typ.) 650 ns
www.irf.com 1
IR2111
(
S
)
&
(
PbF
)
V
CC
V
B
V
S
HO
LO
IN
COM
IN
up to 600V
TO
LOAD
V
CC
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
Description
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for half-
bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Internal deadtime is provided
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Packages
8-Lead PDIP 8-Lead SOIC