Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 55 V 85 A 180 W TO-220AB

IRF1010NPbF

HEXFET

Power MOSFET

07/06/10

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.85

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

www.irf.com 1

DSS

= 55V

DS(on)

= 11mΩ

= 85A

TO-220AB

Advanced HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Description

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 85

@ T

= 100°C Continuous Drain Current, V

@ 10V 60 A

Pulsed Drain Current  290

= 25°C Power Dissipation 180 W

Linear Derating Factor 1.2 W/°C

Gate-to-Source Voltage ± 20 V

Avalanche Current 43 A

Repetitive Avalanche Energy 18 mJ

dv/dt Peak Diode Recovery dv/dt  3.6 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

PD - 94966A

Summary of content (8 pages)

PAGE 1
PD - 94966A IRF1010NPbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 11mΩ G ID = 85A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF1010NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRF1010NPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.
PAGE 4
IRF1010NPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 5000 C, Capacitance(pF) Coss = Cds + Cgd Ciss 4000 3000 Coss 2000 Crss 1000 VGS , Gate-to-Source Voltage (V) 20 6000 0 1 10 VDS = 44V VDS = 27V VDS = 11V 16 12 8 4 0 100 ID = 43A FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 100 120 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRF1010NPbF 100 VDS LIMITED BY PACKAGE VGS 80 D.U.T. ID , Drain Current (A) RG 60 RD + -VDD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.
PAGE 6
15V L VDS D.U.T RG VGS 20V IAS tp DRIVER + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) IRF1010NPbF 500 ID 18A 30A 43A TOP 400 BOTTOM 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T.
PAGE 7
IRF1010NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF1010NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line position indicates "Lead - Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2.