Datasheet

09/24/09
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
PD - 96199A
IRF1324PbF
TO-220AB
IRF1324PbF
S
D
G
V
DSS
24V
R
DS
(
on
)
typ.
1.2m
max.
1.5m
I
D (Silicon Limited)
353A
I
D
(Package Limited)
195A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
dv/dt Peak Diode Recovery V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.50
R
θCS
Case-to-Sink, Flat Greased Surface 0.50 –––
R
θJA
Junction-to-Ambient ––– 62
See Fig. 14, 15, 22a, 22b
300
0.46
°C
± 20
2.0
270
°C/W
300
-55 to + 175
Max.
353
249
1412
195
A