Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 40 V 202 A 333 W TO-220AB

IRF1404PbF

HEXFET

Power MOSFET

Seventh Generation HEXFET

Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications including

automotive.

The TO-220 package is universally preferred for all

automotive-commercial-industrial applications at power

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.45

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

DSS

= 40V

DS(on)

= 0.004Ω

= 202A

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Automotive Qualified (Q101)

l Lead-Free

Description

02/02/04

www.irf.com 1

TO-220AB

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 202

@ T

= 100°C Continuous Drain Current, V

@ 10V 143 A

Pulsed Drain Current  808

= 25°C Power Dissipation 333 W

Linear Derating Factor 2.2 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 620 mJ

Avalanche Current See Fig.12a, 12b, 15, 16 A

Repetitive Avalanche Energy mJ

dv/dt Peak Diode Recovery dv/dt  1.5 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range -55 to + 175

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

PD-94968

Summary of content (9 pages)

PAGE 1
PD-94968 IRF1404PbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Automotive Qualified (Q101) l Lead-Free Description HEXFET® Power MOSFET l D VDSS = 40V RDS(on) = 0.004Ω G ID = 202A S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF1404PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 40 ––– ––– 2.
PAGE 3
IRF1404PbF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V TOP TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 1000 100 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 20µs PULSE WIDTH TJ = 175 °C 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2.
PAGE 4
IRF1404PbF 10000 VGS , Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 8000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Ciss 6000 4000 Coss 2000 Crss 0 1 10 ID = 121A 16 12 8 4 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 100 150 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRF1404PbF 220 VDS LIMITED BY PACKAGE 200 VGS ID , Drain Current (A) 180 140 + -V DD 10V 120 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 100 80 Fig 10a. Switching Time Test Circuit 60 VDS 40 90% 20 0 D.U.T. RG 160 RD 25 50 75 100 125 150 TC , Case Temperature ( °C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.
PAGE 6
IRF1404PbF DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 1500 15V ID 49A 101A BOTTOM 121A TOP 1200 A 900 600 300 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T.
PAGE 7
IRF1404PbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.
PAGE 8
IRF1404PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 9
IRF1404PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.