Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 75 V 82 A 200 W TO-220AB

IRF2807PbF

HEXFET

Power MOSFET

02/02/04

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.65

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

www.irf.com 1

DSS

= 75V

DS(on)

= 13mΩ

= 82A

TO-220AB

Advanced HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Description

PD - 94970

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 82

@ T

= 100°C Continuous Drain Current, V

@ 10V 58 A

Pulsed Drain Current  280

= 25°C Power Dissipation 230 W

Linear Derating Factor 1.5 W/°C

Gate-to-Source Voltage ± 20 V

Avalanche Current 43 A

Repetitive Avalanche Energy 23 mJ

dv/dt Peak Diode Recovery dv/dt  5.9 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Summary of content (8 pages)

PAGE 1
PD - 94970 IRF2807PbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 75V l RDS(on) = 13mΩ G ID = 82A S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF2807PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 75 ––– ––– 2.
PAGE 3
IRF2807PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 100 4.5V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 4.5V 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 25 ° C TJ = 175 ° C 100 V DS = 25V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 Fig 3.
PAGE 4
IRF2807PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 6000 Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 Crss 1000 VGS , Gate-to-Source Voltage (V) 20 7000 10 VDS = 60V VDS = 37V VDS = 15V 16 12 8 4 0 1 ID = 43A 0 100 FOR TEST CIRCUIT SEE FIGURE 13 0 VDS, Drain-to-Source Voltage (V) 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 100 TJ = 175 ° C 120 160 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ =
PAGE 5
IRF2807PbF 100 VDS LIMITED BY PACKAGE VGS ID , Drain Current (A) 80 D.U.T. RG 60 RD + -VDD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 0.02 0.
PAGE 6
15V L VDS D.U.T RG VGS 20V IAS tp DRIVER + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) IRF2807PbF 600 ID 18A 30A 43A TOP 500 BOTTOM 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T.
PAGE 7
IRF2807PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF2807PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.