Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 55 V 110 A 200 W TO-220AB

IRF3205PbF

HEXFET

Power MOSFET

10/31/03

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.75

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

www.irf.com 1

DSS

= 55V

DS(on)

= 8.0mΩ

= 110A



TO-220AB

Description

Advanced HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

 Advanced Process Technology

 Ultra Low On-Resistance

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fast Switching

 Fully Avalanche Rated

 Lead-Free

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 110 

@ T

= 100°C Continuous Drain Current, V

@ 10V 80 A

Pulsed Drain Current  390

= 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

Gate-to-Source Voltage ± 20 V

Avalanche Current 62 A

Repetitive Avalanche Energy 20 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

PD-94791

Summary of content (8 pages)

PAGE 1
PD-94791 IRF3205PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ G ID = 110A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF3205PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– 2.
PAGE 3
IRF3205PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 1 10 10 20µs PULSE WIDTH TJ = 175 °C 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 I D , Drain-to-Source Current (A) 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.
PAGE 4
IRF3205PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 5000 C, Capacitance(pF) Coss = Cds + Cgd 4000 Ciss 3000 2000 Coss 1000 Crss 16 VGS , Gate-to-Source Voltage (V) 6000 0 10 12 10 8 6 4 2 100 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) 40 60 80 100 120 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRF3205PbF LIMITED BY PACKAGE VGS 100 ID , Drain Current (A) RD VDS 120 D.U.T. RG + V DD - 80 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 90% 20 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 0.02 0.01 0.01 0.
PAGE 6
15V L VDS DRIVER D.U.T RG + - VDD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRF3205PbF 500 ID 25A 44A BOTTOM 62A TOP 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T.
PAGE 7
IRF3205PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF3205PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.