Datasheet

8/5/05
www.irf.com 1
PD - 97034
HEXFET
®
Power MOSFET
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
Description
O Advanced Process Technology
O Ultra Low On-Resistance
O 150°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Some Parameters Are Differrent from
IRF4905S
O Lead-Free
Features
IRF4905SPbF
IRF4905LPbF
V
DSS
= -55V
R
DS(on)
= 20mΩ
I
D
= -42A
D
2
Pak
IRF4905SPbF
TO-262
IRF4905LPbF
S
D
G
D
S
D
G
D
GDS
Gate Drain Source
S
D
G
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current c
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy d
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current c
A
E
AR
Repetitive Avalanche Energy g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter Typ. Max.
Units
R
θJC
Junction-to-Case j ––– 0.75
R
θJA
Junction-to-Ambient (PCB Mount, steady state) ij ––– 40
-55 to + 150
300 (1.6mm from case )
10 lbf
y in (1.1N y m)
170
1.3
± 20
Max.
-70
-44
-280
-42
790
140
See Fig.12a, 12b, 15, 16