Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 100 V 9.7 A 48 W TO-220AB

IRF520NPbF

HEXFET

Power MOSFET

PD - 94818

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 9.7

@ T

= 100°C Continuous Drain Current, V

@ 10V 6.8 A

Pulsed Drain Current  38

= 25°C Power Dissipation 48 W

Linear Derating Factor 0.32 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 91 mJ

Avalanche Current 5.7 A

Repetitive Avalanche Energy 4.8 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 3.1

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

DSS

= 100V

DS(on)

= 0.20Ω

= 9.7A

-22

 Advanced Process Technology

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fast Switching

 Fully Avalanche Rated

Description

11/5/03

 Lead-Free

Summary of content (8 pages)

PAGE 1
PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF520NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRF520NPbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 10 4.5V 20µs PULSE WIDTH TC = 25°C 1 0.1 1 10 A 10 4.5V 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25°C TJ = 175°C V DS= 50V 20µs PULSE WIDTH 5 6 7 8 9 10 100 A Fig 2. Typical Output Characteristics 100 1 1 VDS , Drain-to-Source Voltage (V) Fig 1.
PAGE 4
IRF520NPbF 600 Ciss V GS , Gate-to-Source Voltage (V) 500 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = 5.7A 16 400 12 Coss 300 200 Crss 100 0 1 10 100 A 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 VDS , Drain-to-Source Voltage (V) 5 10 15 20 25 A Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRF520NPbF RD VDS 10.0 VGS D.U.T. RG + - VDD ID , Drain Current (A) 8.0 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6.0 Fig 10a. Switching Time Test Circuit 4.0 VDS 90% 2.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS 175 td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.
PAGE 6
IRF520NPbF D.U.T. RG + V - DD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD EAS , Single Pulse Avalanche Energy (mJ) L VDS 200 TOP BOTTOM 160 120 80 40 0 VDD = 25V 25 VDS ID 2.3A 4.0A 5.7A 50 75 100 125 A 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS QGD D.U.T.
PAGE 7
IRF520NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF520NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.