Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET P, -100 V -40 A 200 W D2PAK

IRF5210SPbF

IRF5210LPbF

HEXFET

Power MOSFET

PD - 97049B

DSS

= -100V

DS(on)

= 60mΩ

= -38A

l Advanced Process Technology

l Ultra Low On-Resistance

l 150°C Operating Temperature

l Fast Switching

l Repetitive Avalanche Allowed up to Tjmax

l Some Parameters are Different from

IRF5210S/L

l P-Channel

l Lead-Free

08/04/09

www.irf.com 1

Pak

IRF5210SPbF

TO-262

IRF5210LPbF

GDS

Gate Drain Source

Description

Features of this design are a 150°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating . These fea-

tures combine to make this design an extremely

efficient and reliable device for use in a wide

variety of other applications.

Absolute Maximum Ratings

Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ -10V

@ T

= 100°C

Continuous Drain Current, VGS @ -10V

Pulsed Drain Current

= 25°C

Maximum Power Dissipation W

= 25°C

Maximum Power Dissipation

Linear Derating Factor W/°C

Gate-to-Source Voltage V

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Ener

dv/dt

Peak Diode Recovery dv/dt

V/ns

Operating Junction and °C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case –––

0.75

°C/W

θJA

Junction-to-Ambient (PCB Mount, steady state)

––– 40

-7.4

Max.

-38

-24

-140

3.1

170

1.3

± 20

120

-23

300 (1.6mm from case )

-55 to + 150

Summary of content (10 pages)

PAGE 1
PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D VDSS = -100V RDS(on) = 60mΩ G ID = -38A S D Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
PAGE 2
IRF5210S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance -100 ––– ––– -2.0 9.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– -0.
PAGE 3
IRF5210S/LPbF 1000 1000 100 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 100 10 -4.5V 1 ≤60µs PULSE WIDTH BOTTOM VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 10 -4.5V 1 ≤60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 0.1 0.1 1 10 0.1 100 10 100 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2.
PAGE 4
IRF5210S/LPbF 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= -23A -V GS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss 1000 Crss VDS= -80V VDS= -50V 10.0 VDS= -20V 8.0 6.0 4.0 2.0 100 0.0 1 10 100 0 -VDS, Drain-to-Source Voltage (V) 75 100 125 150 Fig 6. Typical Gate Charge vs.
PAGE 5
IRF5210S/LPbF RD VDS 40 V GS D.U.T. RG 35 - -I D, Drain Current (A) + VDD 30 -10V 25 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 15 10 td(on) 5 tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 T C , Case Temperature (°C) 90% VDS Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 τJ 0.05 R1 R1 τJ τ1 0.02 0.01 0.
PAGE 6
IRF5210S/LPbF L VDS IAS -20V tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) 500 D.U.T RG ID -8.7A -14A BOTTOM -23A 450 TOP 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -10V QGS .2µF .3µF QGD D.U.T.
PAGE 7
IRF5210S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG V GS * + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test -V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [ VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF5210S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information 7+,6 ,6 $1 ,5) 6 :,7+ /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( / ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27 &2'( 3$57 180%(5 ) 6 '$7( &2'( <($5 :((. /,1( / 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27 &2'( 3$57 180%(5 ) 6 '$7( &2'( 3 '(6,*1$7(6 /($' )5(( 352'8&7 237,21$/ <($5 :((.
PAGE 9
IRF5210S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$03/( 7+,6 ,6 $1 ,5/ / /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( & ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27 &2'( 3$57 180%(5 '$7( &2'( <($5 :((. /,1( & 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27 &2'( 3$57 180%(5 '$7( &2'( 3 '(6,*1$7(6 /($' )5(( 352'8&7 237,21$/ <($5 :((.
PAGE 10
IRF5210S/LPbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.