Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET P, -55 V -31 A 110 W TO-220

IRF5305PbF

HEXFET

Power MOSFET

PD - 94788

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ -10V -31

@ T

= 100°C Continuous Drain Current, V

@ -10V -22 A

Pulsed Drain Current  -110

= 25°C Power Dissipation 110 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 280 mJ

Avalanche Current -16 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.4

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

DSS

= -55V

DS(on)

= 0.06Ω

= -31A

-22

 Advanced Process Technology

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fast Switching

 P-Channel

 Fully Avalanche Rated

 Lead-Free

Description

10/31/03

Summary of content (9 pages)

PAGE 1
PD - 94788 IRF5305PbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free D VDSS = -55V RDS(on) = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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IRF5305PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
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IRF5305PbF 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) 100 10 -4.5V 100 20µs PULSE WIDTH TJc = 25°C A 1 0.1 1 10 10 -4.5V R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 2.0 TJ = 25°C TJ = 175°C 10 V DS = -25V 20µs PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 A 100 Fig 2.
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IRF5305PbF C, Capacitance (pF) 2000 Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) 2500 Coss 1500 1000 Crss 500 0 1 10 100 A I D = -16A V DS = -44V V DS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 -VDS , Drain-to-Source Voltage (V) 40 50 A 60 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRF5305PbF RD VDS 35 VGS 30 D.U.T. RG - -ID , Drain Current (A) + 25 -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 15 10 td(on) tr t d(off) tf VGS 5 0 VDD 10% 25 50 75 100 125 150 TC , Case Temperature ( °C) 175 90% VDS Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1.
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IRF5305PbF -20V + - D.U.T RG IAS tp DRIVER VDD A 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS E AS , Single Pulse Avalanche Energy (mJ) L VDS 700 TOP 600 BOTTOM ID -6.6A -11A -16A 500 400 300 200 100 0 VDD = -25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V -10V QGS .3µF QGD D.U.T.
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IRF5305PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + ** RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T.
PAGE 8
IRF5305PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 3 14.09 (.555) 13.47 (.530) IGBTs, CoPACK 2 - DRAIN 1- GATE 3 - SOURCE 2- DRAIN 3- SOURCE 4 - DRAIN 4- DRAIN 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 4.06 (.160) 3.55 (.
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Note: For the most current drawings please refer to the IR website at: http://www.irf.